Standard

High-pressure synthesis and characterization of diamond from an Mg-Si-C system. / Palyanov, Y. N.; Kupriyanov, I. N.; Borzdov, Y. M. и др.

в: CrystEngComm, Том 17, № 38, 10.08.2015, стр. 7323-7331.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Palyanov, YN, Kupriyanov, IN, Borzdov, YM & Bataleva, YV 2015, 'High-pressure synthesis and characterization of diamond from an Mg-Si-C system', CrystEngComm, Том. 17, № 38, стр. 7323-7331. https://doi.org/10.1039/c5ce01265a

APA

Palyanov, Y. N., Kupriyanov, I. N., Borzdov, Y. M., & Bataleva, Y. V. (2015). High-pressure synthesis and characterization of diamond from an Mg-Si-C system. CrystEngComm, 17(38), 7323-7331. https://doi.org/10.1039/c5ce01265a

Vancouver

Palyanov YN, Kupriyanov IN, Borzdov YM, Bataleva YV. High-pressure synthesis and characterization of diamond from an Mg-Si-C system. CrystEngComm. 2015 авг. 10;17(38):7323-7331. doi: 10.1039/c5ce01265a

Author

Palyanov, Y. N. ; Kupriyanov, I. N. ; Borzdov, Y. M. и др. / High-pressure synthesis and characterization of diamond from an Mg-Si-C system. в: CrystEngComm. 2015 ; Том 17, № 38. стр. 7323-7331.

BibTeX

@article{c34f40ced6544ae9b92e41914ab2e2df,
title = "High-pressure synthesis and characterization of diamond from an Mg-Si-C system",
abstract = "Diamond crystallization in the Mg-Si-C system has been studied at high-pressure higherature conditions of 7 GPa and 1500-1900 °C. The features of nucleation and growth of diamond from the carbon solution in the Mg-Si melt are established. The degree of the graphite-to-diamond transformation is found to depend significantly on the crystallization temperature. As opposed to the pure Mg-C system where the cubic morphology dominates, the octahedron with the antiskeletal structure of faces is the dominant form of growth in the Mg-Si-C system over the entire temperature range. The possibility of epitaxial growth of silicon carbide tetrahedral crystals on diamond upon their co-crystallization was noted. Synthesized diamonds are found to contain optically active silicon-vacancy (Si-V) centers and inactive substitutional silicon defects, giving rise to the 1.68 eV system in the photoluminescence spectra and an absorption peak at 1338 cm-1 in the infrared absorption spectra, respectively.",
author = "Palyanov, {Y. N.} and Kupriyanov, {I. N.} and Borzdov, {Y. M.} and Bataleva, {Y. V.}",
year = "2015",
month = aug,
day = "10",
doi = "10.1039/c5ce01265a",
language = "English",
volume = "17",
pages = "7323--7331",
journal = "CrystEngComm",
issn = "1466-8033",
publisher = "Royal Society of Chemistry",
number = "38",

}

RIS

TY - JOUR

T1 - High-pressure synthesis and characterization of diamond from an Mg-Si-C system

AU - Palyanov, Y. N.

AU - Kupriyanov, I. N.

AU - Borzdov, Y. M.

AU - Bataleva, Y. V.

PY - 2015/8/10

Y1 - 2015/8/10

N2 - Diamond crystallization in the Mg-Si-C system has been studied at high-pressure higherature conditions of 7 GPa and 1500-1900 °C. The features of nucleation and growth of diamond from the carbon solution in the Mg-Si melt are established. The degree of the graphite-to-diamond transformation is found to depend significantly on the crystallization temperature. As opposed to the pure Mg-C system where the cubic morphology dominates, the octahedron with the antiskeletal structure of faces is the dominant form of growth in the Mg-Si-C system over the entire temperature range. The possibility of epitaxial growth of silicon carbide tetrahedral crystals on diamond upon their co-crystallization was noted. Synthesized diamonds are found to contain optically active silicon-vacancy (Si-V) centers and inactive substitutional silicon defects, giving rise to the 1.68 eV system in the photoluminescence spectra and an absorption peak at 1338 cm-1 in the infrared absorption spectra, respectively.

AB - Diamond crystallization in the Mg-Si-C system has been studied at high-pressure higherature conditions of 7 GPa and 1500-1900 °C. The features of nucleation and growth of diamond from the carbon solution in the Mg-Si melt are established. The degree of the graphite-to-diamond transformation is found to depend significantly on the crystallization temperature. As opposed to the pure Mg-C system where the cubic morphology dominates, the octahedron with the antiskeletal structure of faces is the dominant form of growth in the Mg-Si-C system over the entire temperature range. The possibility of epitaxial growth of silicon carbide tetrahedral crystals on diamond upon their co-crystallization was noted. Synthesized diamonds are found to contain optically active silicon-vacancy (Si-V) centers and inactive substitutional silicon defects, giving rise to the 1.68 eV system in the photoluminescence spectra and an absorption peak at 1338 cm-1 in the infrared absorption spectra, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84942134048&partnerID=8YFLogxK

U2 - 10.1039/c5ce01265a

DO - 10.1039/c5ce01265a

M3 - Article

AN - SCOPUS:84942134048

VL - 17

SP - 7323

EP - 7331

JO - CrystEngComm

JF - CrystEngComm

SN - 1466-8033

IS - 38

ER -

ID: 25726398