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High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures. / Zhuravlev, K. S.; Valisheva, N. A.; Aksenov, M. S. и др.

2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8803902 (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Zhuravlev, KS, Valisheva, NA, Aksenov, MS, Dmitriev, DD, Toropov, AI, Chistokhin, IB, Gilinsky, AM, Protasov, DY, Malyshev, SA, Chizh, AL & Mikitchuk, KB 2019, High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings., 8803902, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou, Китай, 19.05.2019. https://doi.org/10.1109/IEEE-IWS.2019.8803902

APA

Zhuravlev, K. S., Valisheva, N. A., Aksenov, M. S., Dmitriev, D. D., Toropov, A. I., Chistokhin, I. B., Gilinsky, A. M., Protasov, D. Y., Malyshev, S. A., Chizh, A. L., & Mikitchuk, K. B. (2019). High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings [8803902] (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2019.8803902

Vancouver

Zhuravlev KS, Valisheva NA, Aksenov MS, Dmitriev DD, Toropov AI, Chistokhin IB и др. High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures. в 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8803902. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). doi: 10.1109/IEEE-IWS.2019.8803902

Author

Zhuravlev, K. S. ; Valisheva, N. A. ; Aksenov, M. S. и др. / High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures. 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

BibTeX

@inproceedings{d110b3daaeac45aa84081df00a8fc3fb,
title = "High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures",
abstract = "Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial layers with Schottky barrier and mesa structure were studied. It is shown that the dark current at reverse bias of 2 V for photodiodes with diameters from 10 to 40 μm does not exceed 1××10-10 A. The sensitivity of photodiodes of different diameters with an InGaAs absorbing layer of 640 nm thick is not less than 0.55 W. For Schottky photodiodes with a diameter of 15 μm, cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz.",
keywords = "1.55 μm, I-V, InAlAs/InGaAs/InP, microwave photodiode, microwave power, sensitivity, 1.55 mu m",
author = "Zhuravlev, {K. S.} and Valisheva, {N. A.} and Aksenov, {M. S.} and Dmitriev, {D. D.} and Toropov, {A. I.} and Chistokhin, {I. B.} and Gilinsky, {A. M.} and Protasov, {D. Y.} and Malyshev, {S. A.} and Chizh, {A. L.} and Mikitchuk, {K. B.}",
year = "2019",
month = may,
day = "1",
doi = "10.1109/IEEE-IWS.2019.8803902",
language = "English",
series = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",
address = "United States",
note = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",

}

RIS

TY - GEN

T1 - High-power microwave photodiodes with Schottky contact based on InAlAs/InGaAs/InP heteroepitaxial structures

AU - Zhuravlev, K. S.

AU - Valisheva, N. A.

AU - Aksenov, M. S.

AU - Dmitriev, D. D.

AU - Toropov, A. I.

AU - Chistokhin, I. B.

AU - Gilinsky, A. M.

AU - Protasov, D. Y.

AU - Malyshev, S. A.

AU - Chizh, A. L.

AU - Mikitchuk, K. B.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial layers with Schottky barrier and mesa structure were studied. It is shown that the dark current at reverse bias of 2 V for photodiodes with diameters from 10 to 40 μm does not exceed 1××10-10 A. The sensitivity of photodiodes of different diameters with an InGaAs absorbing layer of 640 nm thick is not less than 0.55 W. For Schottky photodiodes with a diameter of 15 μm, cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz.

AB - Dark current-voltage characteristics, sensitivity and microwave characteristics of photodiodes based on InAlAs/InGaAs (0.6-1.5 μm)/InP(001) heteroepitaxial layers with Schottky barrier and mesa structure were studied. It is shown that the dark current at reverse bias of 2 V for photodiodes with diameters from 10 to 40 μm does not exceed 1××10-10 A. The sensitivity of photodiodes of different diameters with an InGaAs absorbing layer of 640 nm thick is not less than 0.55 W. For Schottky photodiodes with a diameter of 15 μm, cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz.

KW - 1.55 μm

KW - I-V

KW - InAlAs/InGaAs/InP

KW - microwave photodiode

KW - microwave power

KW - sensitivity

KW - 1.55 mu m

UR - http://www.scopus.com/inward/record.url?scp=85071730745&partnerID=8YFLogxK

U2 - 10.1109/IEEE-IWS.2019.8803902

DO - 10.1109/IEEE-IWS.2019.8803902

M3 - Conference contribution

AN - SCOPUS:85071730745

T3 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019

Y2 - 19 May 2019 through 22 May 2019

ER -

ID: 21469718