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Heterostructures with diffused interfaces : Luminescent technique for ascertainment of band alignment type. / Abramkin, D. S.; Gutakovskii, A. K.; Shamirzaev, T. S.

в: Journal of Applied Physics, Том 123, № 11, 115701, 21.03.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Abramkin, DS, Gutakovskii, AK & Shamirzaev, TS 2018, 'Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type', Journal of Applied Physics, Том. 123, № 11, 115701. https://doi.org/10.1063/1.5019993

APA

Abramkin, D. S., Gutakovskii, A. K., & Shamirzaev, T. S. (2018). Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type. Journal of Applied Physics, 123(11), [115701]. https://doi.org/10.1063/1.5019993

Vancouver

Abramkin DS, Gutakovskii AK, Shamirzaev TS. Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type. Journal of Applied Physics. 2018 март 21;123(11):115701. doi: 10.1063/1.5019993

Author

Abramkin, D. S. ; Gutakovskii, A. K. ; Shamirzaev, T. S. / Heterostructures with diffused interfaces : Luminescent technique for ascertainment of band alignment type. в: Journal of Applied Physics. 2018 ; Том 123, № 11.

BibTeX

@article{4323c221f0d84682b6bce24986273acf,
title = "Heterostructures with diffused interfaces: Luminescent technique for ascertainment of band alignment type",
abstract = "The experimental ascertainment of band alignment type for semiconductor heterostructures with diffused interfaces is discussed. A method based on the analysis of the spectral shift of photoluminescence (PL) band with excitation density (P-ex) that takes into account state filling and band bending effects on the PL band shift is developed. It is shown that the shift of PL band maximum position is proportional to h omega(max) similar to (U-e + U-h).ln(P-ex) + b.P-ex (1/3), where U-e (U-h) are electron (hole) Urbach energy tail, and parameter b characterizes the effect of band bending or is equal to zero for heterostructures with type-II or type-I band alignment, respectively. The method was approved with InAs/AlAs, GaAs/AlAs, GaSb/AlAs, and AlSb/AlAs heterostructures containing quantum wells. Published by AIP Publishing.",
keywords = "ASSEMBLED QUANTUM DOTS, RADIATIVE RECOMBINATION, OPTICAL-PROPERTIES, LIGHT-EMISSION, BLUE-SHIFT, WELLS, PHOTOLUMINESCENCE, HETEROJUNCTIONS, LOCALIZATION, EXCITONS",
author = "Abramkin, {D. S.} and Gutakovskii, {A. K.} and Shamirzaev, {T. S.}",
year = "2018",
month = mar,
day = "21",
doi = "10.1063/1.5019993",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "11",

}

RIS

TY - JOUR

T1 - Heterostructures with diffused interfaces

T2 - Luminescent technique for ascertainment of band alignment type

AU - Abramkin, D. S.

AU - Gutakovskii, A. K.

AU - Shamirzaev, T. S.

PY - 2018/3/21

Y1 - 2018/3/21

N2 - The experimental ascertainment of band alignment type for semiconductor heterostructures with diffused interfaces is discussed. A method based on the analysis of the spectral shift of photoluminescence (PL) band with excitation density (P-ex) that takes into account state filling and band bending effects on the PL band shift is developed. It is shown that the shift of PL band maximum position is proportional to h omega(max) similar to (U-e + U-h).ln(P-ex) + b.P-ex (1/3), where U-e (U-h) are electron (hole) Urbach energy tail, and parameter b characterizes the effect of band bending or is equal to zero for heterostructures with type-II or type-I band alignment, respectively. The method was approved with InAs/AlAs, GaAs/AlAs, GaSb/AlAs, and AlSb/AlAs heterostructures containing quantum wells. Published by AIP Publishing.

AB - The experimental ascertainment of band alignment type for semiconductor heterostructures with diffused interfaces is discussed. A method based on the analysis of the spectral shift of photoluminescence (PL) band with excitation density (P-ex) that takes into account state filling and band bending effects on the PL band shift is developed. It is shown that the shift of PL band maximum position is proportional to h omega(max) similar to (U-e + U-h).ln(P-ex) + b.P-ex (1/3), where U-e (U-h) are electron (hole) Urbach energy tail, and parameter b characterizes the effect of band bending or is equal to zero for heterostructures with type-II or type-I band alignment, respectively. The method was approved with InAs/AlAs, GaAs/AlAs, GaSb/AlAs, and AlSb/AlAs heterostructures containing quantum wells. Published by AIP Publishing.

KW - ASSEMBLED QUANTUM DOTS

KW - RADIATIVE RECOMBINATION

KW - OPTICAL-PROPERTIES

KW - LIGHT-EMISSION

KW - BLUE-SHIFT

KW - WELLS

KW - PHOTOLUMINESCENCE

KW - HETEROJUNCTIONS

KW - LOCALIZATION

KW - EXCITONS

UR - http://www.scopus.com/inward/record.url?scp=85044329036&partnerID=8YFLogxK

U2 - 10.1063/1.5019993

DO - 10.1063/1.5019993

M3 - Article

AN - SCOPUS:85044329036

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 115701

ER -

ID: 12176177