TY - JOUR

T1 - Heteroepitaxial Barium Strontium Niobate Films: Structure, Lattice Dynamics, and Dielectric Properties in the Range 0.1–2.5 THz

AU - Stryukov, D. V.

AU - Mamrashev, A. A.

AU - Antsygin, V. D.

AU - Okotrub, K. A.

AU - Utkin, D. E.

AU - Shevchenko, O. N.

AU - Pavlenko, A. V.

N1 - Funding Information: This work was supported by the Russian Federation Ministry of Science and Higher Education as part of the state research target for the Southern Scientific Center, Russian Academy of Sciences in 2022 and by the Russian Federation President’s Grants Council (grant no. MK-678.2020.2). Funding Information: We are grateful to N.A. Nikolaev for his assistance in the terahertz measurements and scanning electron microscopic work. The terahertz dielectric properties and Raman spectra of the samples were measured using equipment at the Optics and Spectroscopy Shared Research Facilities Center, Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences. In the preparation and scanning electron microscopy characterization of the samples, we used equipment at the High Technologies and Analytics of Nanosystems Shared Research Facilities Center, Novosibirsk State University, and the Nanostructures Shared Research Facilities Center, Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Funding Information: The measurements of the terahertz dielectric properties and Raman spectra were supported by the Russian Federation Ministry of Science and Higher Education (state research target, project no. 121032400052-6). Funding Information: The sample preparation and scanning electron microscopic work was supported by the Russian Federation Ministry of Science and Higher Education (grant no. FSUS-2020-00290. Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/1

Y1 - 2022/1

N2 - We have studied the structure, lattice dynamics, and dielectric properties (terahertz spectroscopy) of heteroepitaxial Sr0.5Ba0.5Nb2O6 films grown on MgO (001) substrates by rf cathode sputtering in an oxygen atmosphere. The results demonstrate that the films are heteroepitaxial and homogeneous and have high structural perfection. According to analysis of Raman spectra of the films measured at various temperatures in the range 299–433 K, the behavior of individual vibrational modes shows anomalies at T ≃ 390 ± 10 K, related to the phase transition. The unit cell of barium strontium niobate films 2.4–2.5 μm in thickness is shown to undergo strain both along and across the plane of the interface. Presumably, this is responsible for the increase in the width of the ferroelectric phase transition according to Raman spectroscopy data and also for the observed variations in the dielectric properties of the films in the terahertz frequency range.

AB - We have studied the structure, lattice dynamics, and dielectric properties (terahertz spectroscopy) of heteroepitaxial Sr0.5Ba0.5Nb2O6 films grown on MgO (001) substrates by rf cathode sputtering in an oxygen atmosphere. The results demonstrate that the films are heteroepitaxial and homogeneous and have high structural perfection. According to analysis of Raman spectra of the films measured at various temperatures in the range 299–433 K, the behavior of individual vibrational modes shows anomalies at T ≃ 390 ± 10 K, related to the phase transition. The unit cell of barium strontium niobate films 2.4–2.5 μm in thickness is shown to undergo strain both along and across the plane of the interface. Presumably, this is responsible for the increase in the width of the ferroelectric phase transition according to Raman spectroscopy data and also for the observed variations in the dielectric properties of the films in the terahertz frequency range.

KW - barium strontium niobate

KW - ferroelectric material

KW - heteroepitaxy

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85126286574&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/40984a58-acce-3c64-b0d5-e8fc17342a50/

U2 - 10.1134/S0020168522010125

DO - 10.1134/S0020168522010125

M3 - Article

AN - SCOPUS:85126286574

VL - 58

SP - 56

EP - 63

JO - Inorganic Materials

JF - Inorganic Materials

SN - 0020-1685

IS - 1

ER -