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Giant microwave photoconductance of short channel MOSFETs. / Jaroshevich, A. S.; Kvon, Z. D.; Tkachenko, V. A. и др.

в: Applied Physics Letters, Том 124, № 6, 063501, 05.02.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Jaroshevich, AS, Kvon, ZD, Tkachenko, VA, Tkachenko, OA, Baksheev, DG, Antonov, VA & Popov, VP 2024, 'Giant microwave photoconductance of short channel MOSFETs', Applied Physics Letters, Том. 124, № 6, 063501. https://doi.org/10.1063/5.0185636

APA

Jaroshevich, A. S., Kvon, Z. D., Tkachenko, V. A., Tkachenko, O. A., Baksheev, D. G., Antonov, V. A., & Popov, V. P. (2024). Giant microwave photoconductance of short channel MOSFETs. Applied Physics Letters, 124(6), [063501]. https://doi.org/10.1063/5.0185636

Vancouver

Jaroshevich AS, Kvon ZD, Tkachenko VA, Tkachenko OA, Baksheev DG, Antonov VA и др. Giant microwave photoconductance of short channel MOSFETs. Applied Physics Letters. 2024 февр. 5;124(6):063501. doi: 10.1063/5.0185636

Author

Jaroshevich, A. S. ; Kvon, Z. D. ; Tkachenko, V. A. и др. / Giant microwave photoconductance of short channel MOSFETs. в: Applied Physics Letters. 2024 ; Том 124, № 6.

BibTeX

@article{56146d93337a428d861866c88d1d1224,
title = "Giant microwave photoconductance of short channel MOSFETs",
abstract = "We study microwave photoresponse of a short p-channel MOSFET in the subthreshold regime at temperatures from room to helium. We observe large (several times) enhancement of the MOSFET conductance at 300 K, an order at 77 K, and giant (up to 4-5 orders of magnitude) at 4.2 K. It is shown that this giant enhancement is mainly due to microwave-induced hole tunneling between the MOSFET source and drain. The result obtained exhibits real possibility of developing substantially different kind of microwave radiation detectors fabricated on the basis of ordinary MOS-technology.",
author = "Jaroshevich, {A. S.} and Kvon, {Z. D.} and Tkachenko, {V. A.} and Tkachenko, {O. A.} and Baksheev, {D. G.} and Antonov, {V. A.} and Popov, {V. P.}",
note = "The authors thank the Russian Science Foundation (Grant No. 23-72-30003 ) for support of the experiment, the Russian Science Foundation (Grant No. 19-72-30023) for support of calculations, the Joint Supercomputing Center of the Russian Academy of Sciences for access to computing resources, and the Russian Ministry of Science and Higher Education research Program No. 0242-2021-003 for the PD SOI MOSFET fabrication support.",
year = "2024",
month = feb,
day = "5",
doi = "10.1063/5.0185636",
language = "English",
volume = "124",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "6",

}

RIS

TY - JOUR

T1 - Giant microwave photoconductance of short channel MOSFETs

AU - Jaroshevich, A. S.

AU - Kvon, Z. D.

AU - Tkachenko, V. A.

AU - Tkachenko, O. A.

AU - Baksheev, D. G.

AU - Antonov, V. A.

AU - Popov, V. P.

N1 - The authors thank the Russian Science Foundation (Grant No. 23-72-30003 ) for support of the experiment, the Russian Science Foundation (Grant No. 19-72-30023) for support of calculations, the Joint Supercomputing Center of the Russian Academy of Sciences for access to computing resources, and the Russian Ministry of Science and Higher Education research Program No. 0242-2021-003 for the PD SOI MOSFET fabrication support.

PY - 2024/2/5

Y1 - 2024/2/5

N2 - We study microwave photoresponse of a short p-channel MOSFET in the subthreshold regime at temperatures from room to helium. We observe large (several times) enhancement of the MOSFET conductance at 300 K, an order at 77 K, and giant (up to 4-5 orders of magnitude) at 4.2 K. It is shown that this giant enhancement is mainly due to microwave-induced hole tunneling between the MOSFET source and drain. The result obtained exhibits real possibility of developing substantially different kind of microwave radiation detectors fabricated on the basis of ordinary MOS-technology.

AB - We study microwave photoresponse of a short p-channel MOSFET in the subthreshold regime at temperatures from room to helium. We observe large (several times) enhancement of the MOSFET conductance at 300 K, an order at 77 K, and giant (up to 4-5 orders of magnitude) at 4.2 K. It is shown that this giant enhancement is mainly due to microwave-induced hole tunneling between the MOSFET source and drain. The result obtained exhibits real possibility of developing substantially different kind of microwave radiation detectors fabricated on the basis of ordinary MOS-technology.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85184147002&origin=inward&txGid=2adc4c70198d79bc88c845f03c4e4b82

UR - https://www.mendeley.com/catalogue/6067d258-8eef-3009-b79a-7a55e94845cc/

U2 - 10.1063/5.0185636

DO - 10.1063/5.0185636

M3 - Article

VL - 124

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 063501

ER -

ID: 61151236