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Gate-tunable electron interaction in high-κ dielectric films. / Kondovych, Svitlana; Luk'Yanchuk, Igor; Baturina, Tatyana I. и др.

в: Scientific Reports, Том 7, 42770, 20.02.2017, стр. 42770.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Kondovych, S, Luk'Yanchuk, I, Baturina, TI & Vinokur, VM 2017, 'Gate-tunable electron interaction in high-κ dielectric films', Scientific Reports, Том. 7, 42770, стр. 42770. https://doi.org/10.1038/srep42770

APA

Kondovych, S., Luk'Yanchuk, I., Baturina, T. I., & Vinokur, V. M. (2017). Gate-tunable electron interaction in high-κ dielectric films. Scientific Reports, 7, 42770. [42770]. https://doi.org/10.1038/srep42770

Vancouver

Kondovych S, Luk'Yanchuk I, Baturina TI, Vinokur VM. Gate-tunable electron interaction in high-κ dielectric films. Scientific Reports. 2017 февр. 20;7:42770. 42770. doi: 10.1038/srep42770

Author

Kondovych, Svitlana ; Luk'Yanchuk, Igor ; Baturina, Tatyana I. и др. / Gate-tunable electron interaction in high-κ dielectric films. в: Scientific Reports. 2017 ; Том 7. стр. 42770.

BibTeX

@article{32986ed098ab4f26b392fc1a16067c99,
title = "Gate-tunable electron interaction in high-κ dielectric films",
abstract = "The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.",
keywords = "METAL-INSULATOR-TRANSITION, SUPERINSULATOR, TIN FILMS",
author = "Svitlana Kondovych and Igor Luk'Yanchuk and Baturina, {Tatyana I.} and Vinokur, {Valerii M.}",
year = "2017",
month = feb,
day = "20",
doi = "10.1038/srep42770",
language = "English",
volume = "7",
pages = "42770",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

RIS

TY - JOUR

T1 - Gate-tunable electron interaction in high-κ dielectric films

AU - Kondovych, Svitlana

AU - Luk'Yanchuk, Igor

AU - Baturina, Tatyana I.

AU - Vinokur, Valerii M.

PY - 2017/2/20

Y1 - 2017/2/20

N2 - The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.

AB - The two-dimensional (2D) logarithmic character of Coulomb interaction between charges and the resulting logarithmic confinement is a remarkable inherent property of high dielectric constant (high-κ) thin films with far reaching implications. Most and foremost, this is the charge Berezinskii-Kosterlitz-Thouless transition with the notable manifestation, low-temperature superinsulating topological phase. Here we show that the range of the confinement can be tuned by the external gate electrode and unravel a variety of electrostatic interactions in high-k films. We find that by reducing the distance from the gate to the film, we decrease the spatial range of the 2D long-range logarithmic interaction, changing it to predominantly dipolar or even to exponential one at lateral distances exceeding the dimension of the film-gate separation. Our findings offer a unique laboratory for the in-depth study of topological phase transitions and related phenomena that range from criticality of quantum metal- and superconductor-insulator transitions to the effects of charge-trapping and Coulomb scalability in memory nanodevices.

KW - METAL-INSULATOR-TRANSITION

KW - SUPERINSULATOR

KW - TIN FILMS

UR - http://www.scopus.com/inward/record.url?scp=85013392606&partnerID=8YFLogxK

U2 - 10.1038/srep42770

DO - 10.1038/srep42770

M3 - Article

C2 - 28218245

AN - SCOPUS:85013392606

VL - 7

SP - 42770

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

M1 - 42770

ER -

ID: 10304326