Standard

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates. / Abramkin, D. S.; Petrushkov, M. O.; Putyato, M. A. и др.

в: Semiconductors, Том 53, № 9, 01.09.2019, стр. 1143-1147.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Abramkin, DS, Petrushkov, MO, Putyato, MA, Semyagin, BR, Emelyanov, EA, Preobrazhenskii, VV, Gutakovskii, AK & Shamirzaev, TS 2019, 'GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates', Semiconductors, Том. 53, № 9, стр. 1143-1147. https://doi.org/10.1134/S1063782619090021

APA

Abramkin, D. S., Petrushkov, M. O., Putyato, M. A., Semyagin, B. R., Emelyanov, E. A., Preobrazhenskii, V. V., Gutakovskii, A. K., & Shamirzaev, T. S. (2019). GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates. Semiconductors, 53(9), 1143-1147. https://doi.org/10.1134/S1063782619090021

Vancouver

Abramkin DS, Petrushkov MO, Putyato MA, Semyagin BR, Emelyanov EA, Preobrazhenskii VV и др. GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates. Semiconductors. 2019 сент. 1;53(9):1143-1147. doi: 10.1134/S1063782619090021

Author

Abramkin, D. S. ; Petrushkov, M. O. ; Putyato, M. A. и др. / GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates. в: Semiconductors. 2019 ; Том 53, № 9. стр. 1143-1147.

BibTeX

@article{06e7a4ccf11b4026881b778e3a690ba1,
title = "GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates",
abstract = "Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.",
keywords = "GaP on Si, hybrid substrates, molecular-beam epitaxy, photoluminescence, quantum wells, SEMICONDUCTORS, SILICON, GAP",
author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Putyato, {M. A.} and Semyagin, {B. R.} and Emelyanov, {E. A.} and Preobrazhenskii, {V. V.} and Gutakovskii, {A. K.} and Shamirzaev, {T. S.}",
year = "2019",
month = sep,
day = "1",
doi = "10.1134/S1063782619090021",
language = "English",
volume = "53",
pages = "1143--1147",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Emelyanov, E. A.

AU - Preobrazhenskii, V. V.

AU - Gutakovskii, A. K.

AU - Shamirzaev, T. S.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

AB - Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

KW - GaP on Si

KW - hybrid substrates

KW - molecular-beam epitaxy

KW - photoluminescence

KW - quantum wells

KW - SEMICONDUCTORS

KW - SILICON

KW - GAP

UR - http://www.scopus.com/inward/record.url?scp=85071879647&partnerID=8YFLogxK

U2 - 10.1134/S1063782619090021

DO - 10.1134/S1063782619090021

M3 - Article

AN - SCOPUS:85071879647

VL - 53

SP - 1143

EP - 1147

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 21468001