Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Formation of a Graphene-Like SiN Layer on the Surface Si(111). / Mansurov, V. G.; Galitsyn, Yu G.; Malin, T. V. и др.
в: Semiconductors, Том 52, № 12, 01.12.2018, стр. 1511-1517.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Formation of a Graphene-Like SiN Layer on the Surface Si(111)
AU - Mansurov, V. G.
AU - Galitsyn, Yu G.
AU - Malin, T. V.
AU - Teys, S. A.
AU - Fedosenko, E. V.
AU - Kozhukhov, A. S.
AU - Zhuravlev, K. S.
AU - Cora, Ildikó
AU - Pécz, Béla
N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Abstract: 00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed during the nitridation of silicon before the formation of a stable amorphous Si3N4 phase. Studying the SiN-(8 × 8) structure by scanning tunneling microscopy shows its complex structure: it consists of an adsorption (8/3 × 8/3) phase, with the lateral period 10.2 Å, and a honeycomb structure with a ~6 Å side of a hexagon that is turned 30° with respect the adsorption phase. The band gap of the SiN-(8 × 8) phase is measured and found to be ~2.8 eV, which is smaller compared to the band gap of the β-Si3N4 crystal phase 5.3 eV. The interplanar spacings in the (AlN3)/(SiN)2 structure on the Si(111) surface are measured. The spacings are 3.3 and 2.86 Å in SiN and AlN, respectively. Such interplanar spacings are indicative of weak van der Waals interaction between the layers. A model of the SiN-(8 × 8) structure as a flat graphene-like layer is suggested. The model is consistent with the diffraction and microscopy data.
AB - Abstract: 00-The kinetics of the formation and thermal decomposition of a two-dimensional SiN-(8 × 8) nitride layer on a Si(111) surface is studied. The SiN-(8 × 8) structure is a metastable intermediate phase formed during the nitridation of silicon before the formation of a stable amorphous Si3N4 phase. Studying the SiN-(8 × 8) structure by scanning tunneling microscopy shows its complex structure: it consists of an adsorption (8/3 × 8/3) phase, with the lateral period 10.2 Å, and a honeycomb structure with a ~6 Å side of a hexagon that is turned 30° with respect the adsorption phase. The band gap of the SiN-(8 × 8) phase is measured and found to be ~2.8 eV, which is smaller compared to the band gap of the β-Si3N4 crystal phase 5.3 eV. The interplanar spacings in the (AlN3)/(SiN)2 structure on the Si(111) surface are measured. The spacings are 3.3 and 2.86 Å in SiN and AlN, respectively. Such interplanar spacings are indicative of weak van der Waals interaction between the layers. A model of the SiN-(8 × 8) structure as a flat graphene-like layer is suggested. The model is consistent with the diffraction and microscopy data.
KW - SILICON-NITRIDE
KW - ELECTRONIC-STRUCTURE
KW - CRYSTAL-STRUCTURE
KW - BETA-SI3N4
KW - ADSORPTION
KW - DEPOSITION
KW - KINETICS
KW - AMMONIA
KW - ORIGIN
KW - FILM
UR - http://www.scopus.com/inward/record.url?scp=85056146859&partnerID=8YFLogxK
U2 - 10.1134/S1063782618120151
DO - 10.1134/S1063782618120151
M3 - Article
AN - SCOPUS:85056146859
VL - 52
SP - 1511
EP - 1517
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 12
ER -
ID: 17408172