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Formation of 2D-PhCs with missing holes based on Si-layers by EBL. / Utkin, D. E.; Shklyev, A. A.; Tsarev, A. V. и др.

в: Journal of Physics: Conference Series, Том 917, № 6, 062030, 23.11.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Utkin, DE, Shklyev, AA, Tsarev, AV & Latyshev, AV 2017, 'Formation of 2D-PhCs with missing holes based on Si-layers by EBL', Journal of Physics: Conference Series, Том. 917, № 6, 062030. https://doi.org/10.1088/1742-6596/917/6/062030

APA

Utkin, D. E., Shklyev, A. A., Tsarev, A. V., & Latyshev, A. V. (2017). Formation of 2D-PhCs with missing holes based on Si-layers by EBL. Journal of Physics: Conference Series, 917(6), [062030]. https://doi.org/10.1088/1742-6596/917/6/062030

Vancouver

Utkin DE, Shklyev AA, Tsarev AV, Latyshev AV. Formation of 2D-PhCs with missing holes based on Si-layers by EBL. Journal of Physics: Conference Series. 2017 нояб. 23;917(6):062030. doi: 10.1088/1742-6596/917/6/062030

Author

Utkin, D. E. ; Shklyev, A. A. ; Tsarev, A. V. и др. / Formation of 2D-PhCs with missing holes based on Si-layers by EBL. в: Journal of Physics: Conference Series. 2017 ; Том 917, № 6.

BibTeX

@article{d8240c4b44bb482eb6e1055027c07dd4,
title = "Formation of 2D-PhCs with missing holes based on Si-layers by EBL",
abstract = "The fabrication of the periodic structures, that is two-dimensional photonic crystals (2D PhCs) based on Si-materials by electron beam lithography (EBL) technique has been studied. We have investigated basic lithography processes such as designing, exposition, development, etching and others. The developed top-down approach allows close-packed arrays of elements and holes to be formed in nanometre range. This can be used to produce 2D PhCs with emitting micro-cavities (missing holes) with lateral size parameters with an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.",
author = "Utkin, {D. E.} and Shklyev, {A. A.} and Tsarev, {A. V.} and Latyshev, {A. V.}",
note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.",
year = "2017",
month = nov,
day = "23",
doi = "10.1088/1742-6596/917/6/062030",
language = "English",
volume = "917",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "6",

}

RIS

TY - JOUR

T1 - Formation of 2D-PhCs with missing holes based on Si-layers by EBL

AU - Utkin, D. E.

AU - Shklyev, A. A.

AU - Tsarev, A. V.

AU - Latyshev, A. V.

N1 - Publisher Copyright: © Published under licence by IOP Publishing Ltd.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - The fabrication of the periodic structures, that is two-dimensional photonic crystals (2D PhCs) based on Si-materials by electron beam lithography (EBL) technique has been studied. We have investigated basic lithography processes such as designing, exposition, development, etching and others. The developed top-down approach allows close-packed arrays of elements and holes to be formed in nanometre range. This can be used to produce 2D PhCs with emitting micro-cavities (missing holes) with lateral size parameters with an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.

AB - The fabrication of the periodic structures, that is two-dimensional photonic crystals (2D PhCs) based on Si-materials by electron beam lithography (EBL) technique has been studied. We have investigated basic lithography processes such as designing, exposition, development, etching and others. The developed top-down approach allows close-packed arrays of elements and holes to be formed in nanometre range. This can be used to produce 2D PhCs with emitting micro-cavities (missing holes) with lateral size parameters with an accuracy of about 2% in the Si (100) substrate and in silicon-on-insulator structures. Such accuracy is expected to be sufficient for obtaining the cavities-coupling radiation interference from large areas of 2D PhCs.

UR - http://www.scopus.com/inward/record.url?scp=85036459378&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/917/6/062030

DO - 10.1088/1742-6596/917/6/062030

M3 - Article

AN - SCOPUS:85036459378

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 6

M1 - 062030

ER -

ID: 9649126