Standard

Flat-Band Potential Determination and Catalytical Properties of Sn3O4/SnO2 Heterostructures in the Photo-Electrooxidation of Small Organic Molecules under Ultraviolet (370 nm) and Blue (450 nm) Light. / Gribov, Evgeny; Koshevoy, Evgeny; Kuznetsov, Aleksey и др.

в: Materials, Том 16, № 23, 7300, 23.11.2023.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

APA

Vancouver

Author

BibTeX

@article{452ef459029345c1b20fd48e8bc2ea0a,
title = "Flat-Band Potential Determination and Catalytical Properties of Sn3O4/SnO2 Heterostructures in the Photo-Electrooxidation of Small Organic Molecules under Ultraviolet (370 nm) and Blue (450 nm) Light",
abstract = "Sn3O4 are promising semiconductor materials due to their visible light absorption ability. In this work, a series of materials, such as SnO2, Sn3O4 and Sn3O4/SnO2 heterostructures, with different phase ratios were prepared using hydrothermal synthesis. The materials were characterized using X-ray diffraction (XRD), Raman and diffuse reflectance spectroscopy (DRS), high resolution transmission electron microscopy (HRTEM), nitrogen adsorption (BET). Flat-band potentials (EFB) of the samples were determined using the photocurrent onset potential (POP) method. It was shown that the potentials obtained with open circuit potential measurements versus illumination intensity (OCP) likely corresponded to the EFB of SnO2 nanoparticles in heterostructures due to interfacial electron transfer from the conducting band of Sn3O4 to that of SnO2. The photo-electrooxidation processes of a series of organic substrates were studied in the potential range of 0.6-1.4 V vs. RHE under irradiation with ultraviolet (λ = 370 nm) and visible (λ = 450 nm) light. The Sn3O4 sample showed high activity in the photo-electrooxidation of acetone and formic acid in visible light. The Sn3O4/SnO2 samples exhibited noticeable activity only in the oxidation of formic acid. The presence of the SnO2 phase in the Sn3O4/SnO2 samples increased the photocurrent values under ultraviolet illumination, but significantly reduced the oxidation efficiency in visible light.",
author = "Evgeny Gribov and Evgeny Koshevoy and Aleksey Kuznetsov and Maxim Mikhnenko and Evgeniy Losev and Mikhail Lyulyukin",
note = "This research was funded by RUSSIAN SCIENCE FOUNDATION, grant number 22-23-20208 and NOVOSIBIRSK REGION, agreement No. p-21 dated 6 April 2022.",
year = "2023",
month = nov,
day = "23",
doi = "10.3390/ma16237300",
language = "English",
volume = "16",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "23",

}

RIS

TY - JOUR

T1 - Flat-Band Potential Determination and Catalytical Properties of Sn3O4/SnO2 Heterostructures in the Photo-Electrooxidation of Small Organic Molecules under Ultraviolet (370 nm) and Blue (450 nm) Light

AU - Gribov, Evgeny

AU - Koshevoy, Evgeny

AU - Kuznetsov, Aleksey

AU - Mikhnenko, Maxim

AU - Losev, Evgeniy

AU - Lyulyukin, Mikhail

N1 - This research was funded by RUSSIAN SCIENCE FOUNDATION, grant number 22-23-20208 and NOVOSIBIRSK REGION, agreement No. p-21 dated 6 April 2022.

PY - 2023/11/23

Y1 - 2023/11/23

N2 - Sn3O4 are promising semiconductor materials due to their visible light absorption ability. In this work, a series of materials, such as SnO2, Sn3O4 and Sn3O4/SnO2 heterostructures, with different phase ratios were prepared using hydrothermal synthesis. The materials were characterized using X-ray diffraction (XRD), Raman and diffuse reflectance spectroscopy (DRS), high resolution transmission electron microscopy (HRTEM), nitrogen adsorption (BET). Flat-band potentials (EFB) of the samples were determined using the photocurrent onset potential (POP) method. It was shown that the potentials obtained with open circuit potential measurements versus illumination intensity (OCP) likely corresponded to the EFB of SnO2 nanoparticles in heterostructures due to interfacial electron transfer from the conducting band of Sn3O4 to that of SnO2. The photo-electrooxidation processes of a series of organic substrates were studied in the potential range of 0.6-1.4 V vs. RHE under irradiation with ultraviolet (λ = 370 nm) and visible (λ = 450 nm) light. The Sn3O4 sample showed high activity in the photo-electrooxidation of acetone and formic acid in visible light. The Sn3O4/SnO2 samples exhibited noticeable activity only in the oxidation of formic acid. The presence of the SnO2 phase in the Sn3O4/SnO2 samples increased the photocurrent values under ultraviolet illumination, but significantly reduced the oxidation efficiency in visible light.

AB - Sn3O4 are promising semiconductor materials due to their visible light absorption ability. In this work, a series of materials, such as SnO2, Sn3O4 and Sn3O4/SnO2 heterostructures, with different phase ratios were prepared using hydrothermal synthesis. The materials were characterized using X-ray diffraction (XRD), Raman and diffuse reflectance spectroscopy (DRS), high resolution transmission electron microscopy (HRTEM), nitrogen adsorption (BET). Flat-band potentials (EFB) of the samples were determined using the photocurrent onset potential (POP) method. It was shown that the potentials obtained with open circuit potential measurements versus illumination intensity (OCP) likely corresponded to the EFB of SnO2 nanoparticles in heterostructures due to interfacial electron transfer from the conducting band of Sn3O4 to that of SnO2. The photo-electrooxidation processes of a series of organic substrates were studied in the potential range of 0.6-1.4 V vs. RHE under irradiation with ultraviolet (λ = 370 nm) and visible (λ = 450 nm) light. The Sn3O4 sample showed high activity in the photo-electrooxidation of acetone and formic acid in visible light. The Sn3O4/SnO2 samples exhibited noticeable activity only in the oxidation of formic acid. The presence of the SnO2 phase in the Sn3O4/SnO2 samples increased the photocurrent values under ultraviolet illumination, but significantly reduced the oxidation efficiency in visible light.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85179127485&origin=inward&txGid=fa2867463501d4eac99840cb68cb78c0

U2 - 10.3390/ma16237300

DO - 10.3390/ma16237300

M3 - Article

C2 - 38068044

VL - 16

JO - Materials

JF - Materials

SN - 1996-1944

IS - 23

M1 - 7300

ER -

ID: 59330654