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Field-enhanced mobility in the multiple-trapping regime. / Nenashev, A. V.; Oelerich, J. O.; Jandieri, K. и др.

в: Physical Review B, Том 98, № 3, 035201, 03.07.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Nenashev, AV, Oelerich, JO, Jandieri, K, Valkovskii, VV, Semeniuk, O, Dvurechenskii, AV, Gebhard, F, Juška, G, Reznik, A & Baranovskii, SD 2018, 'Field-enhanced mobility in the multiple-trapping regime', Physical Review B, Том. 98, № 3, 035201. https://doi.org/10.1103/PhysRevB.98.035201

APA

Nenashev, A. V., Oelerich, J. O., Jandieri, K., Valkovskii, V. V., Semeniuk, O., Dvurechenskii, A. V., Gebhard, F., Juška, G., Reznik, A., & Baranovskii, S. D. (2018). Field-enhanced mobility in the multiple-trapping regime. Physical Review B, 98(3), [035201]. https://doi.org/10.1103/PhysRevB.98.035201

Vancouver

Nenashev AV, Oelerich JO, Jandieri K, Valkovskii VV, Semeniuk O, Dvurechenskii AV и др. Field-enhanced mobility in the multiple-trapping regime. Physical Review B. 2018 июль 3;98(3):035201. doi: 10.1103/PhysRevB.98.035201

Author

Nenashev, A. V. ; Oelerich, J. O. ; Jandieri, K. и др. / Field-enhanced mobility in the multiple-trapping regime. в: Physical Review B. 2018 ; Том 98, № 3.

BibTeX

@article{b8d65b87c0694528bbd7be44448fa7f1,
title = "Field-enhanced mobility in the multiple-trapping regime",
abstract = "Charge transport in disordered inorganic semiconductors is governed by the multiple trapping (MT) of carriers from delocalized states in the conduction band into localized traps in the band tail. Although it is well known that carrier mobility in these materials strongly depends on electric field, a consistent description of this effect in the MT regime is still missing. We analyze experimental data obtained in a series of disordered inorganic semiconductors and show that the combined effects of temperature and of the electric field on the carrier mobility can be described by a single parameter, the field-dependent effective temperature. This conclusion is supported by the theoretical analysis of the MT transport, which takes into account the field-assisted release of carriers from the traps into the conduction band.",
keywords = "AMORPHOUS OXIDE SEMICONDUCTOR, THIN-FILM TRANSISTORS, STRONG ELECTRIC-FIELD, A-SI-H, IMPACT IONIZATION, CHARGE-CARRIERS, TEMPERATURE, TRANSPORT, SILICON, STATES",
author = "Nenashev, {A. V.} and Oelerich, {J. O.} and K. Jandieri and Valkovskii, {V. V.} and O. Semeniuk and Dvurechenskii, {A. V.} and F. Gebhard and G. Ju{\v s}ka and A. Reznik and Baranovskii, {S. D.}",
year = "2018",
month = jul,
day = "3",
doi = "10.1103/PhysRevB.98.035201",
language = "English",
volume = "98",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "3",

}

RIS

TY - JOUR

T1 - Field-enhanced mobility in the multiple-trapping regime

AU - Nenashev, A. V.

AU - Oelerich, J. O.

AU - Jandieri, K.

AU - Valkovskii, V. V.

AU - Semeniuk, O.

AU - Dvurechenskii, A. V.

AU - Gebhard, F.

AU - Juška, G.

AU - Reznik, A.

AU - Baranovskii, S. D.

PY - 2018/7/3

Y1 - 2018/7/3

N2 - Charge transport in disordered inorganic semiconductors is governed by the multiple trapping (MT) of carriers from delocalized states in the conduction band into localized traps in the band tail. Although it is well known that carrier mobility in these materials strongly depends on electric field, a consistent description of this effect in the MT regime is still missing. We analyze experimental data obtained in a series of disordered inorganic semiconductors and show that the combined effects of temperature and of the electric field on the carrier mobility can be described by a single parameter, the field-dependent effective temperature. This conclusion is supported by the theoretical analysis of the MT transport, which takes into account the field-assisted release of carriers from the traps into the conduction band.

AB - Charge transport in disordered inorganic semiconductors is governed by the multiple trapping (MT) of carriers from delocalized states in the conduction band into localized traps in the band tail. Although it is well known that carrier mobility in these materials strongly depends on electric field, a consistent description of this effect in the MT regime is still missing. We analyze experimental data obtained in a series of disordered inorganic semiconductors and show that the combined effects of temperature and of the electric field on the carrier mobility can be described by a single parameter, the field-dependent effective temperature. This conclusion is supported by the theoretical analysis of the MT transport, which takes into account the field-assisted release of carriers from the traps into the conduction band.

KW - AMORPHOUS OXIDE SEMICONDUCTOR

KW - THIN-FILM TRANSISTORS

KW - STRONG ELECTRIC-FIELD

KW - A-SI-H

KW - IMPACT IONIZATION

KW - CHARGE-CARRIERS

KW - TEMPERATURE

KW - TRANSPORT

KW - SILICON

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85049795868&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.98.035201

DO - 10.1103/PhysRevB.98.035201

M3 - Article

AN - SCOPUS:85049795868

VL - 98

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 3

M1 - 035201

ER -

ID: 15966350