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Field dependence of hopping mobility : Lattice models against spatial disorder. / Oelerich, Jan Oliver; Nenashev, A. V.; Dvurechenskii, A. V. и др.

в: Physical Review B, Том 96, № 19, 195208, 21.11.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Oelerich, JO, Nenashev, AV, Dvurechenskii, AV, Gebhard, F & Baranovskii, SD 2017, 'Field dependence of hopping mobility: Lattice models against spatial disorder', Physical Review B, Том. 96, № 19, 195208. https://doi.org/10.1103/PhysRevB.96.195208

APA

Oelerich, J. O., Nenashev, A. V., Dvurechenskii, A. V., Gebhard, F., & Baranovskii, S. D. (2017). Field dependence of hopping mobility: Lattice models against spatial disorder. Physical Review B, 96(19), [195208]. https://doi.org/10.1103/PhysRevB.96.195208

Vancouver

Oelerich JO, Nenashev AV, Dvurechenskii AV, Gebhard F, Baranovskii SD. Field dependence of hopping mobility: Lattice models against spatial disorder. Physical Review B. 2017 нояб. 21;96(19):195208. doi: 10.1103/PhysRevB.96.195208

Author

Oelerich, Jan Oliver ; Nenashev, A. V. ; Dvurechenskii, A. V. и др. / Field dependence of hopping mobility : Lattice models against spatial disorder. в: Physical Review B. 2017 ; Том 96, № 19.

BibTeX

@article{79b28440373340278142c350ab39dafc,
title = "Field dependence of hopping mobility: Lattice models against spatial disorder",
abstract = "The theoretical description of the effect of the electric field F on the hopping mobility μ belongs to the not-yet-resolved problems related to charge transport in disordered materials. An often proposed solution is to simulate hopping transport via sites placed on regular grids and to fit the results by phenomenological equations. This approach currently dominates the theoretical research of hopping transport in organic disordered semiconductors. We show that the dependence μ(F) in the case of regular grids can drastically differ from that in systems with spatial disorder. While μ increases with F on lattices, it can decrease in random systems with the same material parameters. Moreover, the material parameters responsible for the dependence μ(F) on lattices differ from those responsible for μ(F) in spatially disordered systems, which makes lattice models inappropriate for studying the field dependence of the hopping mobility.",
keywords = "MOLECULARLY DOPED POLYMERS, CHARGE-CARRIER TRANSPORT, STRONG ELECTRIC-FIELD, DENSITY-OF-STATES, ORGANIC SEMICONDUCTORS, POLY(P-PHENYLENE VINYLENE), EFFECTIVE TEMPERATURE, HOLE TRANSPORT, BAND TAILS, SOLIDS",
author = "Oelerich, {Jan Oliver} and Nenashev, {A. V.} and Dvurechenskii, {A. V.} and F. Gebhard and Baranovskii, {S. D.}",
year = "2017",
month = nov,
day = "21",
doi = "10.1103/PhysRevB.96.195208",
language = "English",
volume = "96",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "19",

}

RIS

TY - JOUR

T1 - Field dependence of hopping mobility

T2 - Lattice models against spatial disorder

AU - Oelerich, Jan Oliver

AU - Nenashev, A. V.

AU - Dvurechenskii, A. V.

AU - Gebhard, F.

AU - Baranovskii, S. D.

PY - 2017/11/21

Y1 - 2017/11/21

N2 - The theoretical description of the effect of the electric field F on the hopping mobility μ belongs to the not-yet-resolved problems related to charge transport in disordered materials. An often proposed solution is to simulate hopping transport via sites placed on regular grids and to fit the results by phenomenological equations. This approach currently dominates the theoretical research of hopping transport in organic disordered semiconductors. We show that the dependence μ(F) in the case of regular grids can drastically differ from that in systems with spatial disorder. While μ increases with F on lattices, it can decrease in random systems with the same material parameters. Moreover, the material parameters responsible for the dependence μ(F) on lattices differ from those responsible for μ(F) in spatially disordered systems, which makes lattice models inappropriate for studying the field dependence of the hopping mobility.

AB - The theoretical description of the effect of the electric field F on the hopping mobility μ belongs to the not-yet-resolved problems related to charge transport in disordered materials. An often proposed solution is to simulate hopping transport via sites placed on regular grids and to fit the results by phenomenological equations. This approach currently dominates the theoretical research of hopping transport in organic disordered semiconductors. We show that the dependence μ(F) in the case of regular grids can drastically differ from that in systems with spatial disorder. While μ increases with F on lattices, it can decrease in random systems with the same material parameters. Moreover, the material parameters responsible for the dependence μ(F) on lattices differ from those responsible for μ(F) in spatially disordered systems, which makes lattice models inappropriate for studying the field dependence of the hopping mobility.

KW - MOLECULARLY DOPED POLYMERS

KW - CHARGE-CARRIER TRANSPORT

KW - STRONG ELECTRIC-FIELD

KW - DENSITY-OF-STATES

KW - ORGANIC SEMICONDUCTORS

KW - POLY(P-PHENYLENE VINYLENE)

KW - EFFECTIVE TEMPERATURE

KW - HOLE TRANSPORT

KW - BAND TAILS

KW - SOLIDS

UR - http://www.scopus.com/inward/record.url?scp=85038837498&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.96.195208

DO - 10.1103/PhysRevB.96.195208

M3 - Article

AN - SCOPUS:85038837498

VL - 96

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 19

M1 - 195208

ER -

ID: 9643317