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Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal. / Yelisseyev, Alexander; Fedyaj, Vladislav; Simonov, Victor и др.

в: Photonics, Том 9, № 10, 774, 10.2022.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Vancouver

Yelisseyev A, Fedyaj V, Simonov V, Isaenko L, Lobanov S, Shklyaev A и др. Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal. Photonics. 2022 окт.;9(10):774. doi: 10.3390/photonics9100774

Author

Yelisseyev, Alexander ; Fedyaj, Vladislav ; Simonov, Victor и др. / Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal. в: Photonics. 2022 ; Том 9, № 10.

BibTeX

@article{d074f89146d341afaa2a6f47d34cc5a1,
title = "Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal",
abstract = "The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures.",
keywords = "antireflection microstructures, femtosecond laser ablation, GaSe crystal",
author = "Alexander Yelisseyev and Vladislav Fedyaj and Victor Simonov and Ludmila Isaenko and Sergey Lobanov and Alexander Shklyaev and Andrey Simanchuk and Sergey Babin and Alexander Dostovalov",
note = "Funding Information: This research was funded by the Russian Science Foundation, grant number 20-72-10027 (crystal growth, spectroscopic investigations) and partly performed on state assignment of IGM SB RAS (composition, chemical analysis) and state assignment/budget of IAE SB RAS (femtosecond writing). Publisher Copyright: {\textcopyright} 2022 by the authors.",
year = "2022",
month = oct,
doi = "10.3390/photonics9100774",
language = "English",
volume = "9",
journal = "Photonics",
issn = "2304-6732",
publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",
number = "10",

}

RIS

TY - JOUR

T1 - Femtosecond Laser Direct Writing of Antireflection Microstructures on the Front and Back Sides of a GaSe Crystal

AU - Yelisseyev, Alexander

AU - Fedyaj, Vladislav

AU - Simonov, Victor

AU - Isaenko, Ludmila

AU - Lobanov, Sergey

AU - Shklyaev, Alexander

AU - Simanchuk, Andrey

AU - Babin, Sergey

AU - Dostovalov, Alexander

N1 - Funding Information: This research was funded by the Russian Science Foundation, grant number 20-72-10027 (crystal growth, spectroscopic investigations) and partly performed on state assignment of IGM SB RAS (composition, chemical analysis) and state assignment/budget of IAE SB RAS (femtosecond writing). Publisher Copyright: © 2022 by the authors.

PY - 2022/10

Y1 - 2022/10

N2 - The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures.

AB - The development of antireflection coatings is crucially important to improve the performance of various photonic devices, for example, to increase the efficiency of harmonic generators based on high-refractive index crystals with significant Fresnel losses. A promising technique for the reducing of radiation reflection is to change the refractive index by fabrication of antireflection microstructures (ARM) on the surface. This paper presents the results of ARM direct writing on the surfaces of a nonlinear GaSe crystal (of ε modification, according to Raman and photoluminescence spectroscopy data) using fs laser radiation and a multiples approach. An increase in transmission from 65% to 80% for an ARM fabricated on one side of the crystal and up to 94% for ARMs fabricated on both sides is demonstrated. The increase in transmission with the increasing pulse energy, as well as with an increase in the number of pulses used for the formation of a single crater, is shown. The experimental results of ARM transmission of GaSe are in qualitative agreement with the simulation results based on the measured profiles and morphology of the ARM structures.

KW - antireflection microstructures

KW - femtosecond laser ablation

KW - GaSe crystal

UR - http://www.scopus.com/inward/record.url?scp=85140772698&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/1cca2e93-a3b9-38e6-8638-1cb0f8e1c2aa/

U2 - 10.3390/photonics9100774

DO - 10.3390/photonics9100774

M3 - Article

AN - SCOPUS:85140772698

VL - 9

JO - Photonics

JF - Photonics

SN - 2304-6732

IS - 10

M1 - 774

ER -

ID: 38654109