Standard

Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes. / Ikonnikov, A. V.; Chernichkin, V. I.; Dudin, V. S. и др.

в: Semiconductors, Том 53, № 9, 01.09.2019, стр. 1272-1277.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ikonnikov, AV, Chernichkin, VI, Dudin, VS, Akopian, DA, Akimov, AN, Klimov, AE, Tereshchenko, OE, Ryabova, LI & Khokhlov, DR 2019, 'Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes', Semiconductors, Том. 53, № 9, стр. 1272-1277. https://doi.org/10.1134/S1063782619090069

APA

Ikonnikov, A. V., Chernichkin, V. I., Dudin, V. S., Akopian, D. A., Akimov, A. N., Klimov, A. E., Tereshchenko, O. E., Ryabova, L. I., & Khokhlov, D. R. (2019). Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes. Semiconductors, 53(9), 1272-1277. https://doi.org/10.1134/S1063782619090069

Vancouver

Ikonnikov AV, Chernichkin VI, Dudin VS, Akopian DA, Akimov AN, Klimov AE и др. Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes. Semiconductors. 2019 сент. 1;53(9):1272-1277. doi: 10.1134/S1063782619090069

Author

Ikonnikov, A. V. ; Chernichkin, V. I. ; Dudin, V. S. и др. / Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes. в: Semiconductors. 2019 ; Том 53, № 9. стр. 1272-1277.

BibTeX

@article{88c1abdc64e340f8a18a77e89cdb0878,
title = "Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes",
abstract = "The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.",
keywords = "Burstein–Moss effect, impurity states, PbSnTe, photoconductivity, surface states, LOCAL MODES, STATES, ALLOYS, Burstein-Moss effect",
author = "Ikonnikov, {A. V.} and Chernichkin, {V. I.} and Dudin, {V. S.} and Akopian, {D. A.} and Akimov, {A. N.} and Klimov, {A. E.} and Tereshchenko, {O. E.} and Ryabova, {L. I.} and Khokhlov, {D. R.}",
year = "2019",
month = sep,
day = "1",
doi = "10.1134/S1063782619090069",
language = "English",
volume = "53",
pages = "1272--1277",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes

AU - Ikonnikov, A. V.

AU - Chernichkin, V. I.

AU - Dudin, V. S.

AU - Akopian, D. A.

AU - Akimov, A. N.

AU - Klimov, A. E.

AU - Tereshchenko, O. E.

AU - Ryabova, L. I.

AU - Khokhlov, D. R.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.

AB - The photoconductivity spectra of PbSnTe(In) epitaxial films are investigated by Fourier spectroscopy in the far infrared range at temperatures from 4.2 to 32.4 K. In addition to interband transitions, subgap features associated with the excitation of impurity-defect states are found in the spectra. The evolution of the spectra with temperature and additional illumination is traced.

KW - Burstein–Moss effect

KW - impurity states

KW - PbSnTe

KW - photoconductivity

KW - surface states

KW - LOCAL MODES

KW - STATES

KW - ALLOYS

KW - Burstein-Moss effect

UR - http://www.scopus.com/inward/record.url?scp=85071870240&partnerID=8YFLogxK

U2 - 10.1134/S1063782619090069

DO - 10.1134/S1063782619090069

M3 - Article

AN - SCOPUS:85071870240

VL - 53

SP - 1272

EP - 1277

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 21472144