Standard

Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing. / Rubanov, S.; Suvorova, A.; Popov, V. P. и др.

в: Diamond and Related Materials, Том 63, 01.03.2016, стр. 143-147.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rubanov, S, Suvorova, A, Popov, VP, Kalinin, AA & Pal'yanov, YN 2016, 'Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing', Diamond and Related Materials, Том. 63, стр. 143-147. https://doi.org/10.1016/j.diamond.2015.11.017

APA

Rubanov, S., Suvorova, A., Popov, V. P., Kalinin, A. A., & Pal'yanov, Y. N. (2016). Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing. Diamond and Related Materials, 63, 143-147. https://doi.org/10.1016/j.diamond.2015.11.017

Vancouver

Rubanov S, Suvorova A, Popov VP, Kalinin AA, Pal'yanov YN. Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing. Diamond and Related Materials. 2016 март 1;63:143-147. doi: 10.1016/j.diamond.2015.11.017

Author

Rubanov, S. ; Suvorova, A. ; Popov, V. P. и др. / Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing. в: Diamond and Related Materials. 2016 ; Том 63. стр. 143-147.

BibTeX

@article{ec19fd23f8524b03938094fa31287073,
title = "Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing",
abstract = "We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.",
keywords = "Diamond, Graphitisation, Ion implantation",
author = "S. Rubanov and A. Suvorova and Popov, {V. P.} and Kalinin, {A. A.} and Pal'yanov, {Yu N.}",
year = "2016",
month = mar,
day = "1",
doi = "10.1016/j.diamond.2015.11.017",
language = "English",
volume = "63",
pages = "143--147",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing

AU - Rubanov, S.

AU - Suvorova, A.

AU - Popov, V. P.

AU - Kalinin, A. A.

AU - Pal'yanov, Yu N.

PY - 2016/3/1

Y1 - 2016/3/1

N2 - We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.

AB - We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30 keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.

KW - Diamond

KW - Graphitisation

KW - Ion implantation

UR - http://www.scopus.com/inward/record.url?scp=84959367101&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2015.11.017

DO - 10.1016/j.diamond.2015.11.017

M3 - Article

AN - SCOPUS:84959367101

VL - 63

SP - 143

EP - 147

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

ID: 25725374