Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation. / Bushunov, Andrey A.; Teslenko, Andrei A.; Tarabrin, Mikhail K. и др.
в: Optics Letters, Том 45, № 21, 01.11.2020, стр. 5994-5997.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation
AU - Bushunov, Andrey A.
AU - Teslenko, Andrei A.
AU - Tarabrin, Mikhail K.
AU - Lazarev, Vladimir A.
AU - Isaenko, Lyudmila I.
AU - Eliseev, Alexander P.
AU - Lobanov, Sergei I.
N1 - Funding Information: Acknowledgment. The authors acknowledge the support of Russian Science Foundation (project 20-72-10027). Vladimir Lazarev is the 2018 OSA Ambassador. Andrey Bushunov, Andrei Teslenko, and Mikhail Tarabrin designed the fabrication method and experimental setup, fabricated ARM samples on GaSe, performed measurements of ARM transmittance with large aperture, and mostly contributed to Letter preparation. Vladimir Lazarev supervised the research project. Lyudmila Isaenko and Sergei Lobanov worked on GaSe crystal growth for experiment and sample preparation for ARM fabrication. Alexander Eliseev performed small aperture transmittance measurements of fabricated ARM samples
PY - 2020/11/1
Y1 - 2020/11/1
N2 - GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance. In this work, ARMs were fabricated on the surface of a GaSe plate by single-pulse femtosecond laser ablation. An average GaSe surface transmittance of 94% in the 7–11 µm range and a maximum transmittance of 97.8% at 8.5 µm were obtained. The proposed method can be used to increase the efficiency of GaSe-based nonlinear converters.
AB - GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance. In this work, ARMs were fabricated on the surface of a GaSe plate by single-pulse femtosecond laser ablation. An average GaSe surface transmittance of 94% in the 7–11 µm range and a maximum transmittance of 97.8% at 8.5 µm were obtained. The proposed method can be used to increase the efficiency of GaSe-based nonlinear converters.
KW - ABSORPTION
KW - INDEX
UR - http://www.scopus.com/inward/record.url?scp=85095391906&partnerID=8YFLogxK
U2 - 10.1364/OL.404515
DO - 10.1364/OL.404515
M3 - Article
C2 - 33137052
AN - SCOPUS:85095391906
VL - 45
SP - 5994
EP - 5997
JO - Optics Letters
JF - Optics Letters
SN - 0146-9592
IS - 21
ER -
ID: 26152258