TY - JOUR

T1 - Exact solution of the problem of dissolved gas segregation by the plane crystallization front

AU - Pil'Nik, Andrey

AU - Chernov, Andrey

PY - 2017/9/27

Y1 - 2017/9/27

N2 - Analytical solution of the segregation problem was found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. It is shown that in the case of "equilibrium crystallization" (when the growth rate is in inverse ratio to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front stays the same during the whole process while the diffusion layer thickness increases with time.

AB - Analytical solution of the segregation problem was found for the arbitrary crystal growth law using the quasi-steady-state approximation. The segregation is caused by the displacement of dissolved gas by moving plane crystallization front. The effect of solidification shrinkage on the crystallization process was taken into account. It is shown that in the case of "equilibrium crystallization" (when the growth rate is in inverse ratio to time) the solution of the problem becomes self-similar. In this case gas concentration at the crystallization front stays the same during the whole process while the diffusion layer thickness increases with time.

KW - PORE SHAPE

KW - HYDRATE FORMATION

KW - SUPERCOOLED MELT

KW - ALLOY COATINGS

KW - LIQUID

KW - MECHANISM

KW - POROSITY

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=85033778363&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/899/3/032019

DO - 10.1088/1742-6596/899/3/032019

M3 - Article

AN - SCOPUS:85033778363

VL - 899

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 3

M1 - 032019

ER -