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Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals. / Yurasov, D. V.; Novikov, A. V.; Dyakov, S. A. и др.

в: Semiconductors, Том 54, № 8, 01.08.2020, стр. 975-981.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Yurasov, DV, Novikov, AV, Dyakov, SA, Stepikhova, MV, Yablonskiy, AN, Sergeev, SM, Utkin, DE & Krasilnik, ZF 2020, 'Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals', Semiconductors, Том. 54, № 8, стр. 975-981. https://doi.org/10.1134/S1063782620080254

APA

Yurasov, D. V., Novikov, A. V., Dyakov, S. A., Stepikhova, M. V., Yablonskiy, A. N., Sergeev, S. M., Utkin, D. E., & Krasilnik, Z. F. (2020). Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals. Semiconductors, 54(8), 975-981. https://doi.org/10.1134/S1063782620080254

Vancouver

Yurasov DV, Novikov AV, Dyakov SA, Stepikhova MV, Yablonskiy AN, Sergeev SM и др. Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals. Semiconductors. 2020 авг. 1;54(8):975-981. doi: 10.1134/S1063782620080254

Author

Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. и др. / Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals. в: Semiconductors. 2020 ; Том 54, № 8. стр. 975-981.

BibTeX

@article{56c6356e08104f619f714e4b89536e4b,
title = "Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals",
abstract = "The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-Q resonances, for which the Q factor exceeds 103, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.",
keywords = "Ge(Si) nanoislands, photoluminescence, photonic crystals, photonic-crystal modes, EXTRACTION, PHOTOLUMINESCENCE, SPONTANEOUS-EMISSION",
author = "Yurasov, {D. V.} and Novikov, {A. V.} and Dyakov, {S. A.} and Stepikhova, {M. V.} and Yablonskiy, {A. N.} and Sergeev, {S. M.} and Utkin, {D. E.} and Krasilnik, {Z. F.}",
note = "Funding Information: The study was supported by the Russian Science Foundation, project no. 19-72-10011. ACKNOWLEDGMENTS Funding Information: The study was carried out with the use of equipment of the Multiple-Access Center, Institute for Physics of Microstructures, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd..",
year = "2020",
month = aug,
day = "1",
doi = "10.1134/S1063782620080254",
language = "English",
volume = "54",
pages = "975--981",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "8",

}

RIS

TY - JOUR

T1 - Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

AU - Yurasov, D. V.

AU - Novikov, A. V.

AU - Dyakov, S. A.

AU - Stepikhova, M. V.

AU - Yablonskiy, A. N.

AU - Sergeev, S. M.

AU - Utkin, D. E.

AU - Krasilnik, Z. F.

N1 - Funding Information: The study was supported by the Russian Science Foundation, project no. 19-72-10011. ACKNOWLEDGMENTS Funding Information: The study was carried out with the use of equipment of the Multiple-Access Center, Institute for Physics of Microstructures, Russian Academy of Sciences. Publisher Copyright: © 2020, Pleiades Publishing, Ltd..

PY - 2020/8/1

Y1 - 2020/8/1

N2 - The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-Q resonances, for which the Q factor exceeds 103, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.

AB - The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-Q resonances, for which the Q factor exceeds 103, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.

KW - Ge(Si) nanoislands

KW - photoluminescence

KW - photonic crystals

KW - photonic-crystal modes

KW - EXTRACTION

KW - PHOTOLUMINESCENCE

KW - SPONTANEOUS-EMISSION

UR - http://www.scopus.com/inward/record.url?scp=85089105852&partnerID=8YFLogxK

U2 - 10.1134/S1063782620080254

DO - 10.1134/S1063782620080254

M3 - Article

AN - SCOPUS:85089105852

VL - 54

SP - 975

EP - 981

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8

ER -

ID: 25602640