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Embedding of iron silicide nanocrystals into monocrystalline silicon : Suppression of emersion effect. / Chusovitin, Evgeniy; Goroshko, Dmitry; Dotsenko, Sergey и др.

Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017. ред. / Yuri N. Kulchin; Roman V. Romashko; Jyh-Chiang Jiang. Том 11024 SPIE, 2019. 1102402 (Proceedings of SPIE; Том 11024).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование

Harvard

Chusovitin, E, Goroshko, D, Dotsenko, S, Shevlyagin, A, Gutakovskii, A & Galkin, N 2019, Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect. в YN Kulchin, RV Romashko & J-C Jiang (ред.), Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017. Том. 11024, 1102402, Proceedings of SPIE, Том. 11024, SPIE, 16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017, Taipei, Китайская Провинция Тайвань, 05.11.2017. https://doi.org/10.1117/12.2314675

APA

Chusovitin, E., Goroshko, D., Dotsenko, S., Shevlyagin, A., Gutakovskii, A., & Galkin, N. (2019). Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect. в Y. N. Kulchin, R. V. Romashko, & J-C. Jiang (Ред.), Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017 (Том 11024). [1102402] (Proceedings of SPIE; Том 11024). SPIE. https://doi.org/10.1117/12.2314675

Vancouver

Chusovitin E, Goroshko D, Dotsenko S, Shevlyagin A, Gutakovskii A, Galkin N. Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect. в Kulchin YN, Romashko RV, Jiang J-C, Редакторы, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017. Том 11024. SPIE. 2019. 1102402. (Proceedings of SPIE). doi: 10.1117/12.2314675

Author

Chusovitin, Evgeniy ; Goroshko, Dmitry ; Dotsenko, Sergey и др. / Embedding of iron silicide nanocrystals into monocrystalline silicon : Suppression of emersion effect. Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017. Редактор / Yuri N. Kulchin ; Roman V. Romashko ; Jyh-Chiang Jiang. Том 11024 SPIE, 2019. (Proceedings of SPIE).

BibTeX

@inproceedings{5804621c4904415ab09030fe48236eb0,
title = "Embedding of iron silicide nanocrystals into monocrystalline silicon: Suppression of emersion effect",
abstract = "The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.",
keywords = "embedded nanocrystals, epitaxy, phase transformation, silicon, β-FeSi, TRANSITION, TEMPERATURE, beta-FeSi2, FESI2, GAAS, SOLID-PHASE EPITAXY, QUANTUM DOTS",
author = "Evgeniy Chusovitin and Dmitry Goroshko and Sergey Dotsenko and Alexander Shevlyagin and Anton Gutakovskii and Nikolay Galkin",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2314675",
language = "English",
volume = "11024",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Kulchin, {Yuri N.} and Romashko, {Roman V.} and Jyh-Chiang Jiang",
booktitle = "Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017",
address = "United States",
note = "16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017 ; Conference date: 05-11-2017 Through 07-11-2017",

}

RIS

TY - GEN

T1 - Embedding of iron silicide nanocrystals into monocrystalline silicon

T2 - 16th Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, APCOM 2017

AU - Chusovitin, Evgeniy

AU - Goroshko, Dmitry

AU - Dotsenko, Sergey

AU - Shevlyagin, Alexander

AU - Gutakovskii, Anton

AU - Galkin, Nikolay

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.

AB - The formation of iron silicide nanocrystals (NCs) and their embedding into monocrystalline silicon was studied. Solid phase epitaxy of 0.4 nm Fe at 630 °C resulted in formation of NCs consisted of β-FeSi2 and ϵ-FeSi phases. Annealing of NCs at 750 °C for 90 min led to transformation of β-FeSi2 and ϵ-FeSi into α-FeSi2. On the other hand, silicon layer growth over as-formed NCs, at the same temperature, resulted in formation of single phase NCs consisted of β-FeSi2. Silicon deposition rate proved to be the crucial point for a full embedding of NCs. The rate of 1 nm/min resulted in emersion of NCs to the surface during silicon overgrowth irrespective of Si cap layer thickness, while the rate of 8 nm/min led to the full embedding of β-FeSi2 NCs. Both incompletely and fully embedded β-FeSi2 NCs have epitaxial relationship and stress favorable for an indirect to direct band-gap transition at Y point.

KW - embedded nanocrystals

KW - epitaxy

KW - phase transformation

KW - silicon

KW - β-FeSi

KW - TRANSITION

KW - TEMPERATURE

KW - beta-FeSi2

KW - FESI2

KW - GAAS

KW - SOLID-PHASE EPITAXY

KW - QUANTUM DOTS

UR - http://www.scopus.com/inward/record.url?scp=85061028627&partnerID=8YFLogxK

U2 - 10.1117/12.2314675

DO - 10.1117/12.2314675

M3 - Conference contribution

AN - SCOPUS:85061028627

VL - 11024

T3 - Proceedings of SPIE

BT - Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics 2017

A2 - Kulchin, Yuri N.

A2 - Romashko, Roman V.

A2 - Jiang, Jyh-Chiang

PB - SPIE

Y2 - 5 November 2017 through 7 November 2017

ER -

ID: 18489709