TY - GEN

T1 - Electrophysical Properties and Thermal Stability of Pt/InAlAs Schottky Barrier Diodes

AU - Paramonova, Maria A.

AU - Genze, Ilya Yu

AU - Aksenov, Maxim S.

AU - Dmitriev, Dmitriy V.

N1 - Conference code: 25

PY - 2024

Y1 - 2024

N2 - In this study, the current-voltage characteristics of Pt/InAlAs Schottky barrier diodes with a chemical preparation of InAlAs surface are investigated. The temporal dependencies of barrier height and ideality factor values for the annealing temperatures of 300, 350 and 400 ℃ are obtained. Abrupt step changes in barrier height dependences for chemically prepared Schottky diodes were observed after 1, 9 and 16 min at the temperatures of 400, 350 and 300 ℃, respectively. The activation energy of solid-state reaction at the Pt/InAlAs interface was calculated to be 0.73±0.14 eV according to Arrhenius equation. The Pt diffusion depth was estimated using the capacitance-voltage characteristics of chemically prepared Schottky diodes at a negative bias voltage. C-V measurements were made for Schottky diodes annealed at 400 ℃ for 1, 9 and 16 min. Significant changes in the capacitance were observed only after 1 min of annealing, which is correlated with barrier height changes. According to calculations, the Pt diffusion depth is 21 nm.

AB - In this study, the current-voltage characteristics of Pt/InAlAs Schottky barrier diodes with a chemical preparation of InAlAs surface are investigated. The temporal dependencies of barrier height and ideality factor values for the annealing temperatures of 300, 350 and 400 ℃ are obtained. Abrupt step changes in barrier height dependences for chemically prepared Schottky diodes were observed after 1, 9 and 16 min at the temperatures of 400, 350 and 300 ℃, respectively. The activation energy of solid-state reaction at the Pt/InAlAs interface was calculated to be 0.73±0.14 eV according to Arrhenius equation. The Pt diffusion depth was estimated using the capacitance-voltage characteristics of chemically prepared Schottky diodes at a negative bias voltage. C-V measurements were made for Schottky diodes annealed at 400 ℃ for 1, 9 and 16 min. Significant changes in the capacitance were observed only after 1 min of annealing, which is correlated with barrier height changes. According to calculations, the Pt diffusion depth is 21 nm.

KW - InAlAs

KW - Pt

KW - Pt diffusion depth

KW - Schottky barrier parameters

KW - Schottky contact

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85201935055&origin=inward&txGid=2d720d4a4cff55ef0a4be2aac595eb3d

UR - https://www.mendeley.com/catalogue/1d79ad31-6363-3b5c-96cf-08ca10122f06/

U2 - 10.1109/EDM61683.2024.10615006

DO - 10.1109/EDM61683.2024.10615006

M3 - Conference contribution

SN - 9798350389234

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 210

EP - 213

BT - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

PB - IEEE Computer Society

T2 - 25th IEEE International Conference of Young Professionals in Electron Devices and Materials

Y2 - 28 June 2024 through 2 July 2024

ER -