Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well. / Gusev, G. M.; Kvon, Z. D.; Levin, A. D. и др.
в: Scientific Reports, Том 9, № 1, 831, 29.01.2019, стр. 831.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well
AU - Gusev, G. M.
AU - Kvon, Z. D.
AU - Levin, A. D.
AU - Olshanetsky, E. B.
AU - Raichev, O. E.
AU - Mikhailov, N. N.
AU - Dvoretsky, S. A.
N1 - Publisher Copyright: © 2019, The Author(s).
PY - 2019/1/29
Y1 - 2019/1/29
N2 - We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction. We test a hot carrier effect model and demonstrate that the energy transfer complies with the Wiedemann Franz law near the charge neutrality point in the edge transport regime.
AB - We have measured the differential resistance in a two-dimensional topological insulator (2DTI) in a HgTe quantum well, as a function of the applied dc current. The transport near the charge neutrality point is characterized by a pair of counter propagating gapless edge modes. In the presence of an electric field, the energy is transported by counter propagating channels in the opposite direction. We test a hot carrier effect model and demonstrate that the energy transfer complies with the Wiedemann Franz law near the charge neutrality point in the edge transport regime.
KW - TRANSPORT
UR - http://www.scopus.com/inward/record.url?scp=85060757094&partnerID=8YFLogxK
U2 - 10.1038/s41598-018-36705-5
DO - 10.1038/s41598-018-36705-5
M3 - Article
C2 - 30696853
AN - SCOPUS:85060757094
VL - 9
SP - 831
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 831
ER -
ID: 18484482