Standard

Electronic Structure of Amorphous SiOx with Variable Composition. / Karpushin, A. A.; Gritsenko, V. A.

в: JETP Letters, Том 108, № 2, 01.07.2018, стр. 127-131.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Karpushin, AA & Gritsenko, VA 2018, 'Electronic Structure of Amorphous SiOx with Variable Composition', JETP Letters, Том. 108, № 2, стр. 127-131. https://doi.org/10.1134/S0021364018140084

APA

Karpushin, A. A., & Gritsenko, V. A. (2018). Electronic Structure of Amorphous SiOx with Variable Composition. JETP Letters, 108(2), 127-131. https://doi.org/10.1134/S0021364018140084

Vancouver

Karpushin AA, Gritsenko VA. Electronic Structure of Amorphous SiOx with Variable Composition. JETP Letters. 2018 июль 1;108(2):127-131. doi: 10.1134/S0021364018140084

Author

Karpushin, A. A. ; Gritsenko, V. A. / Electronic Structure of Amorphous SiOx with Variable Composition. в: JETP Letters. 2018 ; Том 108, № 2. стр. 127-131.

BibTeX

@article{d9335674008c4b968a9ae3d2f72e5e90,
title = "Electronic Structure of Amorphous SiOx with Variable Composition",
abstract = "The heights of barriers for the injection of electrons and holes from silicon in SiOx have been calculated in the tight binding approximation without any fitting parameters. The dependence of the electronic structure of silicon-enriched amorphous silicon oxide SiOx on the degree of enrichment has been found. The calculations have been performed with the parameterization of the matrix elements of the tight binding Hamiltonian proposed in our previous work. This parameter involves a change in the localization region of valence electrons of an insulated atom at its introduction into a solid. It has been shown that the inclusion of this change makes it possible to calculate the electronic structure without fitting parameters using the parameters of individual atoms as initial data. This circumstance allows the calculation in the absolute energy scale with zero corresponding to the energy of the electron in vacuum.",
author = "Karpushin, {A. A.} and Gritsenko, {V. A.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Inc.",
year = "2018",
month = jul,
day = "1",
doi = "10.1134/S0021364018140084",
language = "English",
volume = "108",
pages = "127--131",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "2",

}

RIS

TY - JOUR

T1 - Electronic Structure of Amorphous SiOx with Variable Composition

AU - Karpushin, A. A.

AU - Gritsenko, V. A.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Inc.

PY - 2018/7/1

Y1 - 2018/7/1

N2 - The heights of barriers for the injection of electrons and holes from silicon in SiOx have been calculated in the tight binding approximation without any fitting parameters. The dependence of the electronic structure of silicon-enriched amorphous silicon oxide SiOx on the degree of enrichment has been found. The calculations have been performed with the parameterization of the matrix elements of the tight binding Hamiltonian proposed in our previous work. This parameter involves a change in the localization region of valence electrons of an insulated atom at its introduction into a solid. It has been shown that the inclusion of this change makes it possible to calculate the electronic structure without fitting parameters using the parameters of individual atoms as initial data. This circumstance allows the calculation in the absolute energy scale with zero corresponding to the energy of the electron in vacuum.

AB - The heights of barriers for the injection of electrons and holes from silicon in SiOx have been calculated in the tight binding approximation without any fitting parameters. The dependence of the electronic structure of silicon-enriched amorphous silicon oxide SiOx on the degree of enrichment has been found. The calculations have been performed with the parameterization of the matrix elements of the tight binding Hamiltonian proposed in our previous work. This parameter involves a change in the localization region of valence electrons of an insulated atom at its introduction into a solid. It has been shown that the inclusion of this change makes it possible to calculate the electronic structure without fitting parameters using the parameters of individual atoms as initial data. This circumstance allows the calculation in the absolute energy scale with zero corresponding to the energy of the electron in vacuum.

UR - http://www.scopus.com/inward/record.url?scp=85053895078&partnerID=8YFLogxK

U2 - 10.1134/S0021364018140084

DO - 10.1134/S0021364018140084

M3 - Article

AN - SCOPUS:85053895078

VL - 108

SP - 127

EP - 131

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 2

ER -

ID: 16751889