TY - JOUR

T1 - Electron-hole transport in semiconductors

T2 - 13th International Conference on Computer-Aided Technologies in Applied Mathematics, ICAM 2020

AU - Sabelfeld, Karl K.

AU - Kireeva, Anastasiya

N1 - Funding Information: Support of the Russian Science Foundation under Grant 19-11-00019 is gratefully acknowledged Publisher Copyright: © Published under licence by IOP Publishing Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12/21

Y1 - 2020/12/21

N2 - A random walk based stochastic simulation algorithm for solving a nonlinear system of transient drift-diffusion-Poisson equations for semiconductors with random doping profile is developed. The method is then applied to simulate and analyze the stochastic dynamics of the transport of electrons and holes in doped semiconductor material. This analysis has a theoretical but also a practical interest since an addition even of a small concentration of foreign atoms to the regular semiconductor material produces dramatic changes in the electrical properties. The nonlinear drift-diffusion-Poisson system is solved by the iteration procedure including alternating simulation of the drift-diffusion processes and solving the Poisson equation. Here, we extend the iteration algorithm to solve the drift-diffusion-Poisson system with additional term governing the random inputs in the system like the stochastic doping, random distribution of quantum dots, and an irregular family of defects. Impact of these random entries on the stochastic dynamics of the drift velocity and electron and hole concentrations is studied.

AB - A random walk based stochastic simulation algorithm for solving a nonlinear system of transient drift-diffusion-Poisson equations for semiconductors with random doping profile is developed. The method is then applied to simulate and analyze the stochastic dynamics of the transport of electrons and holes in doped semiconductor material. This analysis has a theoretical but also a practical interest since an addition even of a small concentration of foreign atoms to the regular semiconductor material produces dramatic changes in the electrical properties. The nonlinear drift-diffusion-Poisson system is solved by the iteration procedure including alternating simulation of the drift-diffusion processes and solving the Poisson equation. Here, we extend the iteration algorithm to solve the drift-diffusion-Poisson system with additional term governing the random inputs in the system like the stochastic doping, random distribution of quantum dots, and an irregular family of defects. Impact of these random entries on the stochastic dynamics of the drift velocity and electron and hole concentrations is studied.

UR - http://www.scopus.com/inward/record.url?scp=85098582391&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1680/1/012044

DO - 10.1088/1742-6596/1680/1/012044

M3 - Conference article

AN - SCOPUS:85098582391

VL - 1680

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012044

Y2 - 7 September 2020 through 9 September 2020

ER -