Standard
Electron Transport : From Nanostructures to Nanoelectromechanical Systems. / Pogosov, A. G.; Budantsev, M. V.; Shevyrin, A. A. и др.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 101-129 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование
Harvard
Pogosov, AG, Budantsev, MV
, Shevyrin, AA, Zhdanov, EY & Pokhabov, DA 2017,
Electron Transport: From Nanostructures to Nanoelectromechanical Systems. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, Elsevier Science Publishing Company, Inc., стр. 101-129.
https://doi.org/10.1016/B978-0-12-810512-2.00005-6
APA
Pogosov, A. G., Budantsev, M. V.
, Shevyrin, A. A., Zhdanov, E. Y., & Pokhabov, D. A. (2017).
Electron Transport: From Nanostructures to Nanoelectromechanical Systems. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications (стр. 101-129). (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). Elsevier Science Publishing Company, Inc..
https://doi.org/10.1016/B978-0-12-810512-2.00005-6
Vancouver
Pogosov AG, Budantsev MV
, Shevyrin AA, Zhdanov EY, Pokhabov DA.
Electron Transport: From Nanostructures to Nanoelectromechanical Systems. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc. 2017. стр. 101-129. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). doi: 10.1016/B978-0-12-810512-2.00005-6
Author
Pogosov, A. G. ; Budantsev, M. V.
; Shevyrin, A. A. и др. /
Electron Transport : From Nanostructures to Nanoelectromechanical Systems. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 101-129 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
BibTeX
@inbook{464669e9e5904e3887990603061a2475,
title = "Electron Transport: From Nanostructures to Nanoelectromechanical Systems",
abstract = "Electron transport in nanostructured systems, with characteristic sizes that are less than the mean free path of the electron or the phase relaxation length of its wave functions, becomes so nontrivial that it requires reinterpretation and rephrasing of the term resistance itself. The examples of such systems are solid state realizations of electron Sinai billiards. An intriguing development in semiconductor {"}nanostructuring{"} technology has been nanostructure fabrication from suspended conducting semiconductor membranes detached from the bulk. Such structures, featuring a mutual coupling of electrical and mechanical degrees of freedom, are referred to as nanoelectromechanical systems. We describe the results of investigations into electron transport phenomena in semiconductor nanostructures, which also involve suspended nanostructures detached from the bulk.",
keywords = "Ballistic electron transport, Coulomb blockade, Dynamical chaos, Electron Sinai billiards, Mesoscopics, Nanoelectromechanical systems, Quantum Hall effect, MAGNETORESISTANCE, BILLIARDS, PERIODIC LATTICE, HALL-EFFECT REGIME, SUPERLATTICES, CONDUCTANCE FLUCTUATIONS, HYSTERESIS, GAS, MAGNETIC-FIELD, BLOCKADE",
author = "Pogosov, {A. G.} and Budantsev, {M. V.} and Shevyrin, {A. A.} and Zhdanov, {E. Yu} and Pokhabov, {D. A.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00005-6",
language = "English",
isbn = "9780128105139",
series = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
publisher = "Elsevier Science Publishing Company, Inc.",
pages = "101--129",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
address = "Netherlands",
}
RIS
TY - CHAP
T1 - Electron Transport
T2 - From Nanostructures to Nanoelectromechanical Systems
AU - Pogosov, A. G.
AU - Budantsev, M. V.
AU - Shevyrin, A. A.
AU - Zhdanov, E. Yu
AU - Pokhabov, D. A.
N1 - Publisher Copyright:
© 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - Electron transport in nanostructured systems, with characteristic sizes that are less than the mean free path of the electron or the phase relaxation length of its wave functions, becomes so nontrivial that it requires reinterpretation and rephrasing of the term resistance itself. The examples of such systems are solid state realizations of electron Sinai billiards. An intriguing development in semiconductor "nanostructuring" technology has been nanostructure fabrication from suspended conducting semiconductor membranes detached from the bulk. Such structures, featuring a mutual coupling of electrical and mechanical degrees of freedom, are referred to as nanoelectromechanical systems. We describe the results of investigations into electron transport phenomena in semiconductor nanostructures, which also involve suspended nanostructures detached from the bulk.
AB - Electron transport in nanostructured systems, with characteristic sizes that are less than the mean free path of the electron or the phase relaxation length of its wave functions, becomes so nontrivial that it requires reinterpretation and rephrasing of the term resistance itself. The examples of such systems are solid state realizations of electron Sinai billiards. An intriguing development in semiconductor "nanostructuring" technology has been nanostructure fabrication from suspended conducting semiconductor membranes detached from the bulk. Such structures, featuring a mutual coupling of electrical and mechanical degrees of freedom, are referred to as nanoelectromechanical systems. We describe the results of investigations into electron transport phenomena in semiconductor nanostructures, which also involve suspended nanostructures detached from the bulk.
KW - Ballistic electron transport
KW - Coulomb blockade
KW - Dynamical chaos
KW - Electron Sinai billiards
KW - Mesoscopics
KW - Nanoelectromechanical systems
KW - Quantum Hall effect
KW - MAGNETORESISTANCE
KW - BILLIARDS
KW - PERIODIC LATTICE
KW - HALL-EFFECT REGIME
KW - SUPERLATTICES
KW - CONDUCTANCE FLUCTUATIONS
KW - HYSTERESIS
KW - GAS
KW - MAGNETIC-FIELD
KW - BLOCKADE
UR - http://www.scopus.com/inward/record.url?scp=85022217371&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/0734e5aa-6f1b-32c4-87c8-b0ebcd3f6a8a/
U2 - 10.1016/B978-0-12-810512-2.00005-6
DO - 10.1016/B978-0-12-810512-2.00005-6
M3 - Chapter
SN - 9780128105139
T3 - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
SP - 101
EP - 129
BT - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Publishing Company, Inc.
ER -
