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Electron emission from GaAs(Cs,O) : Transition from negative to positive effective affinity. / Zhuravlev, A. G.; Khoroshilov, V. S.; Alperovich, V. L.

в: Applied Surface Science, Том 483, 31.07.2019, стр. 895-900.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhuravlev, AG, Khoroshilov, VS & Alperovich, VL 2019, 'Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity', Applied Surface Science, Том. 483, стр. 895-900. https://doi.org/10.1016/j.apsusc.2019.04.010

APA

Zhuravlev, A. G., Khoroshilov, V. S., & Alperovich, V. L. (2019). Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity. Applied Surface Science, 483, 895-900. https://doi.org/10.1016/j.apsusc.2019.04.010

Vancouver

Zhuravlev AG, Khoroshilov VS, Alperovich VL. Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity. Applied Surface Science. 2019 июль 31;483:895-900. doi: 10.1016/j.apsusc.2019.04.010

Author

Zhuravlev, A. G. ; Khoroshilov, V. S. ; Alperovich, V. L. / Electron emission from GaAs(Cs,O) : Transition from negative to positive effective affinity. в: Applied Surface Science. 2019 ; Том 483. стр. 895-900.

BibTeX

@article{a66dc1db652c40f9838914b20f5d46d9,
title = "Electron emission from GaAs(Cs,O): Transition from negative to positive effective affinity",
abstract = "The evolution of the escape probability of hot and thermalized photoelectrons to vacuum from GaAs(001) with adsorbed layers of cesium and oxygen under the transition from the negative to positive effective electron affinity is studied by photoemission quantum yield spectroscopy. A minimum in the dependence of the escape probability of thermalized electrons at zero affinity is observed. The minimum is caused by a photoelectron capture into the two-dimensional subband states in the near-surface band bending region. Lower escape probability values for the cesium deposition, as compared to the oxygen deposition on the GaAs(Cs,O) surface with negative electron affinity, are explained by the photoelectron reflection or scattering at two-dimensional “metallic” Cs clusters.",
keywords = "Electron affinity, GaAs surface, Photoemission, Photon-enhanced thermionic emission, Solar energy conversion",
author = "Zhuravlev, {A. G.} and Khoroshilov, {V. S.} and Alperovich, {V. L.}",
year = "2019",
month = jul,
day = "31",
doi = "10.1016/j.apsusc.2019.04.010",
language = "English",
volume = "483",
pages = "895--900",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Electron emission from GaAs(Cs,O)

T2 - Transition from negative to positive effective affinity

AU - Zhuravlev, A. G.

AU - Khoroshilov, V. S.

AU - Alperovich, V. L.

PY - 2019/7/31

Y1 - 2019/7/31

N2 - The evolution of the escape probability of hot and thermalized photoelectrons to vacuum from GaAs(001) with adsorbed layers of cesium and oxygen under the transition from the negative to positive effective electron affinity is studied by photoemission quantum yield spectroscopy. A minimum in the dependence of the escape probability of thermalized electrons at zero affinity is observed. The minimum is caused by a photoelectron capture into the two-dimensional subband states in the near-surface band bending region. Lower escape probability values for the cesium deposition, as compared to the oxygen deposition on the GaAs(Cs,O) surface with negative electron affinity, are explained by the photoelectron reflection or scattering at two-dimensional “metallic” Cs clusters.

AB - The evolution of the escape probability of hot and thermalized photoelectrons to vacuum from GaAs(001) with adsorbed layers of cesium and oxygen under the transition from the negative to positive effective electron affinity is studied by photoemission quantum yield spectroscopy. A minimum in the dependence of the escape probability of thermalized electrons at zero affinity is observed. The minimum is caused by a photoelectron capture into the two-dimensional subband states in the near-surface band bending region. Lower escape probability values for the cesium deposition, as compared to the oxygen deposition on the GaAs(Cs,O) surface with negative electron affinity, are explained by the photoelectron reflection or scattering at two-dimensional “metallic” Cs clusters.

KW - Electron affinity

KW - GaAs surface

KW - Photoemission

KW - Photon-enhanced thermionic emission

KW - Solar energy conversion

UR - http://www.scopus.com/inward/record.url?scp=85063944713&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.04.010

DO - 10.1016/j.apsusc.2019.04.010

M3 - Article

AN - SCOPUS:85063944713

VL - 483

SP - 895

EP - 900

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 19356649