TY - JOUR

T1 - Electron and hole injection barriers between silicon substrate and RF magnetron sputtered In2O3 : Er films

AU - Feklistov, Konstantin V.

AU - Lemzyakov, Aleksey G.

AU - Shklyaev, Alexander A.

AU - Protasov, Dmitry Yu.

AU - Deryabin, Alexander S.

AU - Spesivsev, Evgeny V.

AU - Gulyaev, Dmitry V.

AU - Pugachev, Alexey M.

AU - Esaev, Dmitriy G.

N1 - Optical measurements were conducted under State Assignment FWGW-2022-00005. The work was financially supported by the FSI (Grant 4235GS1/70543 as of 27.10.2021) and by the Ministry of Science and Higher Education of the Russian Federation (Project No. 075-15-2020-797 (13.1902.21.0024)). Electrical measurements were carried out on facilities of the VTAN Joint Use Center of the Novosibirsk State University. Part of optical measurements were conducted on equipment of the Joint Use Center for High-Resolution Spectroscopy of Gases and Condensed Media of the Institute of Automation and Electrometry, Siberian Branch of the Russian Academy of Sciences. Films were deposited at the Siberian Center for Synchrotron and Terahertz Radiation Joint Use Center on the VEPP-4–VEPP-2000 Complex Unique Research Installation of the Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences. The sputtering target was manufactured by Phildal Holding Co., Ltd., China. Публикация для корректировки.

PY - 2023

Y1 - 2023

N2 - In 2 O 3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In 2 O 3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In 2 O 3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In 2 O 3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In 2 O 3 : Er heterojunction has been analyzed. The energy gap between the In 2 O 3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.

AB - In 2 O 3 : Er films have been synthesized on silicon substrates by RF magnetron sputter deposition. The currents through the synthesized metal/oxide/semiconductor (MOS) structures (Si/In 2 O 3 : Er/In-contact) have been measured for n and p type conductivity silicon substrates and described within the model of majority carrier thermoemission through the barrier, with bias voltage correction to the silicon potential drop. The electron and hole injection barriers between the silicon substrate and the film have been found to be 0.14 and 0.3 eV, respectively, by measuring the temperature dependence of the forward current at a low sub-barrier bias. The resulting low hole injection barrier is accounted for by the presence of defect state density spreading from the valence band edge into the In 2 O 3 : Er band gap to form a hole conduction channel. The presence of defect state density in the In 2 O 3 : Er band gap is confirmed by photoluminescence data in the respective energy range 1.55–3.0 eV. The band structure of the Si/In 2 O 3 : Er heterojunction has been analyzed. The energy gap between the In 2 O 3 : Er conduction band electrons and the band gap conduction channel holes has been estimated to be 1.56 eV.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85172780965&origin=inward&txGid=7ff95a32d9fa8ec9e73f07f85a0079c3

UR - https://www.mendeley.com/catalogue/df838bbc-c7a3-342d-8e24-11383ec23cb2/

U2 - 10.3897/j.moem.9.2.109980

DO - 10.3897/j.moem.9.2.109980

M3 - Article

VL - 9

SP - 57

EP - 68

JO - Modern Electronic Materials

JF - Modern Electronic Materials

SN - 2452-2449

IS - 2

ER -