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Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. / Zhdanov, E. Yu; Pogosov, A. G.; Pokhabov, D. A. и др.

в: Optoelectronics, Instrumentation and Data Processing, Том 54, № 5, 01.09.2018, стр. 496-501.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhdanov, EY, Pogosov, AG, Pokhabov, DA, Budantsev, MV, Kozhukhov, AS & Bakarov, AK 2018, 'Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy', Optoelectronics, Instrumentation and Data Processing, Том. 54, № 5, стр. 496-501. https://doi.org/10.3103/S8756699018050114

APA

Zhdanov, E. Y., Pogosov, A. G., Pokhabov, D. A., Budantsev, M. V., Kozhukhov, A. S., & Bakarov, A. K. (2018). Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. Optoelectronics, Instrumentation and Data Processing, 54(5), 496-501. https://doi.org/10.3103/S8756699018050114

Vancouver

Zhdanov EY, Pogosov AG, Pokhabov DA, Budantsev MV, Kozhukhov AS, Bakarov AK. Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. Optoelectronics, Instrumentation and Data Processing. 2018 сент. 1;54(5):496-501. doi: 10.3103/S8756699018050114

Author

Zhdanov, E. Yu ; Pogosov, A. G. ; Pokhabov, D. A. и др. / Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. в: Optoelectronics, Instrumentation and Data Processing. 2018 ; Том 54, № 5. стр. 496-501.

BibTeX

@article{930f695cba8a44c9a80f5aea971ae7cc,
title = "Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy",
abstract = "This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.",
keywords = "atomic-force microscopy, GaAs/AlGaAs, nanoelectromechanical systems, suspended nanostructures",
author = "Zhdanov, {E. Yu} and Pogosov, {A. G.} and Pokhabov, {D. A.} and Budantsev, {M. V.} and Kozhukhov, {A. S.} and Bakarov, {A. K.}",
year = "2018",
month = sep,
day = "1",
doi = "10.3103/S8756699018050114",
language = "English",
volume = "54",
pages = "496--501",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

AU - Zhdanov, E. Yu

AU - Pogosov, A. G.

AU - Pokhabov, D. A.

AU - Budantsev, M. V.

AU - Kozhukhov, A. S.

AU - Bakarov, A. K.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

AB - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

KW - atomic-force microscopy

KW - GaAs/AlGaAs

KW - nanoelectromechanical systems

KW - suspended nanostructures

UR - http://www.scopus.com/inward/record.url?scp=85057572625&partnerID=8YFLogxK

U2 - 10.3103/S8756699018050114

DO - 10.3103/S8756699018050114

M3 - Article

AN - SCOPUS:85057572625

VL - 54

SP - 496

EP - 501

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 17669443