Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Effect of rare-earth element oxides on diamond crystallization in mg-based systems. / Palyanov, Yuri N.; Borzdov, Yuri M.; Khokhryakov, Alexander F. и др.
в: Crystals, Том 9, № 6, 300, 01.06.2019.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Effect of rare-earth element oxides on diamond crystallization in mg-based systems
AU - Palyanov, Yuri N.
AU - Borzdov, Yuri M.
AU - Khokhryakov, Alexander F.
AU - Kupriyanov, Igor N.
N1 - Publisher Copyright: © 2019 by the authors. Licensee MDPI, Basel, Switzerland.
PY - 2019/6/1
Y1 - 2019/6/1
N2 - Diamond crystallization in Mg-R2O3-C systems (R = Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb) was studied at 7.8 GPa and 1800◦C. It was found that rare-earth oxide additives in an amount of 10 wt % did not significantly affect both the degree of graphite-to-diamond conversion and crystal morphology relative to the Mg-C system. The effect of higher amounts of rare-earth oxide additives on diamond crystallization was studied for a Mg-Sm2O3-C system with a Sm2O3 content varied from 0 to 50 wt %. It was established that with an increase in the Sm2O3 content in the growth system, the degree of graphite-to-diamond conversion decreased from 80% at 10% Sm2O3 to 0% at 40% Sm2O3. At high Sm2O3 contents (40 and 50 wt %), instead of diamond, mass crystallization of metastable graphite was established. The observed changes in the degree of the graphite-to-diamond conversion, the changeover of diamond crystallization to the crystallization of metastable graphite, and the changes in diamond crystal morphology with increasing the Sm2O3 content attested the inhibiting effect of rare-earth oxides on diamond crystallization processes in the Mg-Sm-O-C system. The crystallized diamonds were studied by a suite of optical spectroscopy techniques, and the major characteristics of their defect and impurity structures were revealed. For diamond crystals produced with 10 wt % and 20 wt % Sm2O3 additives, a specific photoluminescence signal comprising four groups of lines centered at approximately 580, 620, 670, and 725 nm was detected, which was tentatively assigned to emission characteristic of Sm3+ ions.
AB - Diamond crystallization in Mg-R2O3-C systems (R = Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb) was studied at 7.8 GPa and 1800◦C. It was found that rare-earth oxide additives in an amount of 10 wt % did not significantly affect both the degree of graphite-to-diamond conversion and crystal morphology relative to the Mg-C system. The effect of higher amounts of rare-earth oxide additives on diamond crystallization was studied for a Mg-Sm2O3-C system with a Sm2O3 content varied from 0 to 50 wt %. It was established that with an increase in the Sm2O3 content in the growth system, the degree of graphite-to-diamond conversion decreased from 80% at 10% Sm2O3 to 0% at 40% Sm2O3. At high Sm2O3 contents (40 and 50 wt %), instead of diamond, mass crystallization of metastable graphite was established. The observed changes in the degree of the graphite-to-diamond conversion, the changeover of diamond crystallization to the crystallization of metastable graphite, and the changes in diamond crystal morphology with increasing the Sm2O3 content attested the inhibiting effect of rare-earth oxides on diamond crystallization processes in the Mg-Sm-O-C system. The crystallized diamonds were studied by a suite of optical spectroscopy techniques, and the major characteristics of their defect and impurity structures were revealed. For diamond crystals produced with 10 wt % and 20 wt % Sm2O3 additives, a specific photoluminescence signal comprising four groups of lines centered at approximately 580, 620, 670, and 725 nm was detected, which was tentatively assigned to emission characteristic of Sm3+ ions.
KW - Characterization
KW - Crystal morphology
KW - Crystallization
KW - Defects
KW - Diamond
KW - High-pressure
KW - High-temperature
KW - Rare-earth ions
KW - rare-earth ions
KW - SPINS
KW - crystal morphology
KW - diamond
KW - high-pressure
KW - high-temperature
KW - defects
KW - GROWTH
KW - crystallization
KW - HIGH-PRESSURE SYNTHESIS
KW - CRYSTALS
KW - characterization
UR - http://www.scopus.com/inward/record.url?scp=85069905716&partnerID=8YFLogxK
U2 - 10.3390/cryst9060300
DO - 10.3390/cryst9060300
M3 - Article
AN - SCOPUS:85069905716
VL - 9
JO - Crystals
JF - Crystals
SN - 2073-4352
IS - 6
M1 - 300
ER -
ID: 21145719