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Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands. / Novikov, Pavel L.; Atovullaev, Timur; Smagina, Zhanna V. и др.

в: Physica Status Solidi (C) Current Topics in Solid State Physics, Том 14, № 12, 1700200, 01.12.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Novikov, PL, Atovullaev, T, Smagina, ZV, Dvurechenskii, AV & Pavskii, KV 2017, 'Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands', Physica Status Solidi (C) Current Topics in Solid State Physics, Том. 14, № 12, 1700200. https://doi.org/10.1002/pssc.201700200

APA

Novikov, P. L., Atovullaev, T., Smagina, Z. V., Dvurechenskii, A. V., & Pavskii, K. V. (2017). Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands. Physica Status Solidi (C) Current Topics in Solid State Physics, 14(12), [1700200]. https://doi.org/10.1002/pssc.201700200

Vancouver

Novikov PL, Atovullaev T, Smagina ZV, Dvurechenskii AV, Pavskii KV. Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands. Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 дек. 1;14(12):1700200. doi: 10.1002/pssc.201700200

Author

Novikov, Pavel L. ; Atovullaev, Timur ; Smagina, Zhanna V. и др. / Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands. в: Physica Status Solidi (C) Current Topics in Solid State Physics. 2017 ; Том 14, № 12.

BibTeX

@article{2c2ccd428b4c4e7fba9e1ee491623ca0,
title = "Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands",
abstract = "Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irradiation. Laterally ordered chains of Ge nanoislands were grown by molecular beam epitaxy of Ge on the pre-patterned Si substrates. It was shown, that the location of subsequently grown Ge nanoislands depends upon the sidewall inclination in grooves. The effect is ascribed to strain induced by Ge interstitials under the groove's bottom. Our proposal was confirmed by molecular dynamics calculations that allowed the determination of strain in grooves as dependent on the groove's shape.",
keywords = "molecular dynamics calculations, pre-patterned substrates, space-arranged arrays of quantum dots, NANOCRYSTALS, SILICON, GROWTH, ISLANDS, SI(001), QUANTUM DOTS",
author = "Novikov, {Pavel L.} and Timur Atovullaev and Smagina, {Zhanna V.} and Dvurechenskii, {Anatoly V.} and Pavskii, {Kirill V.}",
year = "2017",
month = dec,
day = "1",
doi = "10.1002/pssc.201700200",
language = "English",
volume = "14",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-Blackwell",
number = "12",

}

RIS

TY - JOUR

T1 - Effect of Interstitials Embedded in Pre-Patterned Si Substrate on Location of Ge Nanoislands

AU - Novikov, Pavel L.

AU - Atovullaev, Timur

AU - Smagina, Zhanna V.

AU - Dvurechenskii, Anatoly V.

AU - Pavskii, Kirill V.

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irradiation. Laterally ordered chains of Ge nanoislands were grown by molecular beam epitaxy of Ge on the pre-patterned Si substrates. It was shown, that the location of subsequently grown Ge nanoislands depends upon the sidewall inclination in grooves. The effect is ascribed to strain induced by Ge interstitials under the groove's bottom. Our proposal was confirmed by molecular dynamics calculations that allowed the determination of strain in grooves as dependent on the groove's shape.

AB - Large-area periodical pattern on Si(100) was fabricated using combination of nanoimprint lithography and ion irradiation through mask. Ordered structures with grooves and ridges were prepared by the selective etching of regions amorphized by ion irradiation. Laterally ordered chains of Ge nanoislands were grown by molecular beam epitaxy of Ge on the pre-patterned Si substrates. It was shown, that the location of subsequently grown Ge nanoislands depends upon the sidewall inclination in grooves. The effect is ascribed to strain induced by Ge interstitials under the groove's bottom. Our proposal was confirmed by molecular dynamics calculations that allowed the determination of strain in grooves as dependent on the groove's shape.

KW - molecular dynamics calculations

KW - pre-patterned substrates

KW - space-arranged arrays of quantum dots

KW - NANOCRYSTALS

KW - SILICON

KW - GROWTH

KW - ISLANDS

KW - SI(001)

KW - QUANTUM DOTS

UR - http://www.scopus.com/inward/record.url?scp=85038107465&partnerID=8YFLogxK

U2 - 10.1002/pssc.201700200

DO - 10.1002/pssc.201700200

M3 - Article

AN - SCOPUS:85038107465

VL - 14

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 12

M1 - 1700200

ER -

ID: 9408873