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Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe. / Ishchenko, D. V.; Molodtsova, E. L.; Suprun, S. P. и др.

в: Applied Physics Letters, Том 127, № 10, 103107, 08.09.2025.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ishchenko, DV, Molodtsova, EL, Suprun, SP, Kyrova, ED, Fedosenko, EV & Tereshchenko, OE 2025, 'Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe', Applied Physics Letters, Том. 127, № 10, 103107. https://doi.org/10.1063/5.0280504

APA

Ishchenko, D. V., Molodtsova, E. L., Suprun, S. P., Kyrova, E. D., Fedosenko, E. V., & Tereshchenko, O. E. (2025). Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe. Applied Physics Letters, 127(10), [103107]. https://doi.org/10.1063/5.0280504

Vancouver

Ishchenko DV, Molodtsova EL, Suprun SP, Kyrova ED, Fedosenko EV, Tereshchenko OE. Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe. Applied Physics Letters. 2025 сент. 8;127(10):103107. doi: 10.1063/5.0280504

Author

Ishchenko, D. V. ; Molodtsova, E. L. ; Suprun, S. P. и др. / Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe. в: Applied Physics Letters. 2025 ; Том 127, № 10.

BibTeX

@article{4ecd482eb3fe4659883281273ce2609d,
title = "Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe",
abstract = "The peculiarities of the molecular-beam epitaxy of monocrystalline indium-doped Pb1−xSnxTe films grown on (111) BaF2 substrates were studied as a function of the indium incorporation rate in the growth process. Statistical analysis of the growth regimes and the films' electrophysical properties show that indium incorporation during the growth process affects both the growth rate and film quality. It is shown that indium inhibits film growth, demonstrating the effect of indium as a surfactant on the growth of PST thin films. The smoothest surface and maximum carrier mobility in Pb1−xSnxTe films (up to 105 cm2/V s at T = 30 K) were achieved in a narrow range of ratios (VPST(In)/VIn ≈ 2-3).",
author = "Ishchenko, {D. V.} and Molodtsova, {E. L.} and Suprun, {S. P.} and Kyrova, {E. D.} and Fedosenko, {E. V.} and Tereshchenko, {O. E.}",
note = "The authors acknowledge receiving support from the Saint Petersburg State University (Grant No. 125022702939-2) and the Russian Science Foundation (Grant No. 23-12-00016) and through the framework of the State assignment of the ISP SB RAS.",
year = "2025",
month = sep,
day = "8",
doi = "10.1063/5.0280504",
language = "English",
volume = "127",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Inc.",
number = "10",

}

RIS

TY - JOUR

T1 - Effect of indium embedding on molecular-beam epitaxial growth of Pb1−xSnxTe

AU - Ishchenko, D. V.

AU - Molodtsova, E. L.

AU - Suprun, S. P.

AU - Kyrova, E. D.

AU - Fedosenko, E. V.

AU - Tereshchenko, O. E.

N1 - The authors acknowledge receiving support from the Saint Petersburg State University (Grant No. 125022702939-2) and the Russian Science Foundation (Grant No. 23-12-00016) and through the framework of the State assignment of the ISP SB RAS.

PY - 2025/9/8

Y1 - 2025/9/8

N2 - The peculiarities of the molecular-beam epitaxy of monocrystalline indium-doped Pb1−xSnxTe films grown on (111) BaF2 substrates were studied as a function of the indium incorporation rate in the growth process. Statistical analysis of the growth regimes and the films' electrophysical properties show that indium incorporation during the growth process affects both the growth rate and film quality. It is shown that indium inhibits film growth, demonstrating the effect of indium as a surfactant on the growth of PST thin films. The smoothest surface and maximum carrier mobility in Pb1−xSnxTe films (up to 105 cm2/V s at T = 30 K) were achieved in a narrow range of ratios (VPST(In)/VIn ≈ 2-3).

AB - The peculiarities of the molecular-beam epitaxy of monocrystalline indium-doped Pb1−xSnxTe films grown on (111) BaF2 substrates were studied as a function of the indium incorporation rate in the growth process. Statistical analysis of the growth regimes and the films' electrophysical properties show that indium incorporation during the growth process affects both the growth rate and film quality. It is shown that indium inhibits film growth, demonstrating the effect of indium as a surfactant on the growth of PST thin films. The smoothest surface and maximum carrier mobility in Pb1−xSnxTe films (up to 105 cm2/V s at T = 30 K) were achieved in a narrow range of ratios (VPST(In)/VIn ≈ 2-3).

UR - https://www.scopus.com/pages/publications/105015383744

UR - https://www.mendeley.com/catalogue/a659fd3c-4662-3334-a16f-6a04404d1f61/

U2 - 10.1063/5.0280504

DO - 10.1063/5.0280504

M3 - Article

VL - 127

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 10

M1 - 103107

ER -

ID: 69753456