TY - GEN

T1 - Effect of Annealing on the Chemical Composition of the Pt/InAlAs Interface

AU - Genze, Ilya Yu

AU - Aksenov, Maxim S.

AU - Paramonova, Maria A.

AU - Zakirov, Eugeniy R.

AU - Dmitriev, Dmitry V.

N1 - Conference code: 25

PY - 2024

Y1 - 2024

N2 - In this work, the effect of annealing on the chemical composition of Pt/InAlAs interface formed on the InAlAs surface after a chemical treatment was studied. Based on X-ray photoelectron spectroscopy data, it is shown that the composition of the native oxide layer at the InAlAs surface is significantly changed after the Pt deposition. The oxide forms of indium (In2O3) and arsenic (As2O3) are reduced with the formation of metal forms (In-In, As-As) and the most stable aluminum oxide (Al2O3) is also formed. It is shown that, as a result of annealing at a temperature of 300 °C, a significant interdiffusion of Pt, In and As occurs at the Pt/InAlAs interface, as well as solid-state reactions leading to the PtAs2 layer formation. After annealing at 400 °C, almost all Pt interacts with metallic As0 to form a thick PtAs2 layer, thus, indicating a change of the Schottky barrier interface from Pt/InAlAs to Pt/PtAs2/InAlAs.

AB - In this work, the effect of annealing on the chemical composition of Pt/InAlAs interface formed on the InAlAs surface after a chemical treatment was studied. Based on X-ray photoelectron spectroscopy data, it is shown that the composition of the native oxide layer at the InAlAs surface is significantly changed after the Pt deposition. The oxide forms of indium (In2O3) and arsenic (As2O3) are reduced with the formation of metal forms (In-In, As-As) and the most stable aluminum oxide (Al2O3) is also formed. It is shown that, as a result of annealing at a temperature of 300 °C, a significant interdiffusion of Pt, In and As occurs at the Pt/InAlAs interface, as well as solid-state reactions leading to the PtAs2 layer formation. After annealing at 400 °C, almost all Pt interacts with metallic As0 to form a thick PtAs2 layer, thus, indicating a change of the Schottky barrier interface from Pt/InAlAs to Pt/PtAs2/InAlAs.

KW - InAlAs

KW - Pt

KW - PtAs2

KW - Schottky barrier

KW - XPS

KW - annealing

KW - diffusion

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85201967290&origin=inward&txGid=3029400f441e4436d2f704a1485363a8

UR - https://www.mendeley.com/catalogue/b005dc21-3e00-3d26-9cf8-eb6b053fc7e8/

U2 - 10.1109/EDM61683.2024.10614949

DO - 10.1109/EDM61683.2024.10614949

M3 - Conference contribution

SN - 9798350389234

T3 - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

SP - 30

EP - 33

BT - International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM

PB - IEEE Computer Society

T2 - 25th IEEE International Conference of Young Professionals in Electron Devices and Materials

Y2 - 28 June 2024 through 2 July 2024

ER -