TY - JOUR

T1 - Dynamics of Vacancy Formation and Distribution in Semiconductor Heterostructures: Effect of Thermally Generated Intrinsic Electrons

AU - Shamirzaev, Timur S

AU - Atuchin, Victor V

AU - Zhilitskiy, Vladimir E

AU - Gornov, Alexander Yu

N1 - Funding: This work was supported by the Russian Science Foundation (grant no. 22-12-00022).

PY - 2023/1/11

Y1 - 2023/1/11

N2 - The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at annealing temperatures forms a charge-carrier density gradient along a heterostructure. The nonuniform spatial distribution of charged vacancy concentration that appears as a result of strong dependence in the vacancy formation rate on the local charge-carrier density is revealed. A model of vacancy-mediated diffusion at high temperatures typical for post-growth annealing that takes into account this effect and dynamics of nonequilibrium vacancy concentration is developed. The change of atomic diffusivity rate in time that follows on the of spatial vacancy distribution dynamics in a model heterostructure with quantum wells during a high-temperature annealing at fixed temperatures is demonstrated by computational modeling.

AB - The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at annealing temperatures forms a charge-carrier density gradient along a heterostructure. The nonuniform spatial distribution of charged vacancy concentration that appears as a result of strong dependence in the vacancy formation rate on the local charge-carrier density is revealed. A model of vacancy-mediated diffusion at high temperatures typical for post-growth annealing that takes into account this effect and dynamics of nonequilibrium vacancy concentration is developed. The change of atomic diffusivity rate in time that follows on the of spatial vacancy distribution dynamics in a model heterostructure with quantum wells during a high-temperature annealing at fixed temperatures is demonstrated by computational modeling.

KW - VACANCY GENERATION

KW - RECOMBINATION

KW - SEMICONDUCTOR HETEROSTRUCTURE

KW - DIFFUSION

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85146781322&origin=inward&txGid=ef5134f49c3d0dfa23d9d326bae6751b

UR - https://www.elibrary.ru/item.asp?id=50452644

UR - https://www.mendeley.com/catalogue/94a3ad1f-c9be-3527-88c0-2f4818a4cf6c/

U2 - 10.3390/nano13020308

DO - 10.3390/nano13020308

M3 - Article

C2 - 36678062

VL - 13

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 2

M1 - 308

ER -