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Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1). / Sabelfeld, Karl K.; Kaganer, Vladimir M.; Pfüller, Carsten и др.

в: Journal Physics D: Applied Physics, Том 50, № 40, 405101, 11.09.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Sabelfeld, KK, Kaganer, VM, Pfüller, C & Brandt, O 2017, 'Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)', Journal Physics D: Applied Physics, Том. 50, № 40, 405101. https://doi.org/10.1088/1361-6463/aa85c8

APA

Sabelfeld, K. K., Kaganer, V. M., Pfüller, C., & Brandt, O. (2017). Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1). Journal Physics D: Applied Physics, 50(40), [405101]. https://doi.org/10.1088/1361-6463/aa85c8

Vancouver

Sabelfeld KK, Kaganer VM, Pfüller C, Brandt O. Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1). Journal Physics D: Applied Physics. 2017 сент. 11;50(40):405101. doi: 10.1088/1361-6463/aa85c8

Author

Sabelfeld, Karl K. ; Kaganer, Vladimir M. ; Pfüller, Carsten и др. / Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1). в: Journal Physics D: Applied Physics. 2017 ; Том 50, № 40.

BibTeX

@article{2afdc0ef93fb4d1b91fb29b2552c4a3b,
title = "Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)",
abstract = "We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0 0 0 1) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of 6 × 105 cm-2.",
keywords = "cathodoluminescence, dislocation, EBIC, GaN, RECOMBINATION, SEMICONDUCTOR, THREADING DISLOCATIONS, THEORETICAL DESCRIPTION, LIGHT-EMITTING-DIODES, CHARGE-COLLECTION, GAN, SEM, DIFFUSION LENGTH, LOCALIZED DEFECTS",
author = "Sabelfeld, {Karl K.} and Kaganer, {Vladimir M.} and Carsten Pf{\"u}ller and Oliver Brandt",
note = "Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",
year = "2017",
month = sep,
day = "11",
doi = "10.1088/1361-6463/aa85c8",
language = "English",
volume = "50",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "40",

}

RIS

TY - JOUR

T1 - Dislocation contrast in cathodoluminescence and electron-beam induced current maps on GaN(0 0 0 1)

AU - Sabelfeld, Karl K.

AU - Kaganer, Vladimir M.

AU - Pfüller, Carsten

AU - Brandt, Oliver

N1 - Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/9/11

Y1 - 2017/9/11

N2 - We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0 0 0 1) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of 6 × 105 cm-2.

AB - We theoretically analyze the contrast observed at the outcrop of a threading dislocation at the GaN(0 0 0 1) surface in cathodoluminescence and electron-beam induced current maps. We consider exciton diffusion and recombination including finite recombination velocities both at the planar surface and at the dislocation. Formulating the reciprocity theorem for this general case enables us to provide a rigorous analytical solution of this diffusion-recombination problem. The results of the calculations are applied to an experimental example to determine both the exciton diffusion length and the recombination strength of threading dislocations in a free-standing GaN layer with a dislocation density of 6 × 105 cm-2.

KW - cathodoluminescence

KW - dislocation

KW - EBIC

KW - GaN

KW - RECOMBINATION

KW - SEMICONDUCTOR

KW - THREADING DISLOCATIONS

KW - THEORETICAL DESCRIPTION

KW - LIGHT-EMITTING-DIODES

KW - CHARGE-COLLECTION

KW - GAN

KW - SEM

KW - DIFFUSION LENGTH

KW - LOCALIZED DEFECTS

UR - http://www.scopus.com/inward/record.url?scp=85029905778&partnerID=8YFLogxK

U2 - 10.1088/1361-6463/aa85c8

DO - 10.1088/1361-6463/aa85c8

M3 - Article

AN - SCOPUS:85029905778

VL - 50

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 40

M1 - 405101

ER -

ID: 9055809