Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. / Kohler, Malte; Zamchiy, Alexandr; Pomaska, Manuel и др.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 3468-3472 8548008.Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells
AU - Kohler, Malte
AU - Zamchiy, Alexandr
AU - Pomaska, Manuel
AU - Lambertz, Andreas
AU - Lentz, Florian
AU - Duan, Weiyuan
AU - Smirnov, Vladimir
AU - Finger, Friedhelm
AU - Rau, Uwe
AU - Ding, Kaining
PY - 2018/11/26
Y1 - 2018/11/26
N2 - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.
AB - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.
KW - passivated contact
KW - photovoltaic cells
KW - selected contact
KW - silicon
KW - silicon carbide
KW - transparent passivated contact
KW - tunneling
UR - http://www.scopus.com/inward/record.url?scp=85059913293&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2018.8548008
DO - 10.1109/PVSC.2018.8548008
M3 - Conference contribution
AN - SCOPUS:85059913293
SP - 3468
EP - 3472
BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Y2 - 10 June 2018 through 15 June 2018
ER -
ID: 18142377