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Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures. / Shklyaev, A. A.; Budazhapova, A. E.

в: Materials Science in Semiconductor Processing, Том 57, 01.01.2017, стр. 18-23.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Shklyaev, AA & Budazhapova, AE 2017, 'Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures', Materials Science in Semiconductor Processing, Том. 57, стр. 18-23. https://doi.org/10.1016/j.mssp.2016.09.033

APA

Shklyaev, A. A., & Budazhapova, A. E. (2017). Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures. Materials Science in Semiconductor Processing, 57, 18-23. https://doi.org/10.1016/j.mssp.2016.09.033

Vancouver

Shklyaev AA, Budazhapova AE. Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures. Materials Science in Semiconductor Processing. 2017 янв. 1;57:18-23. doi: 10.1016/j.mssp.2016.09.033

Author

Shklyaev, A. A. ; Budazhapova, A. E. / Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures. в: Materials Science in Semiconductor Processing. 2017 ; Том 57. стр. 18-23.

BibTeX

@article{f4c410d2a0d84a85b255edb66d26b097,
title = "Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures",
abstract = "The strain relaxation during the Ge growth on Si(100) occurs vikia surface diffusion and Si-Ge intermixing at temperatures below 800 °C. The Ge diffusion into the Si substrate is an additional process at higher temperatures. We found that, if its rate is higher than the Ge deposition rate, the island formation is not realized. We determined the critical Ge deposition rate as a function of the temperature in the range of 840–960 °C, at which the dynamic equilibrium between the growth of islands and their decay through the diffusion takes place. The islands grown in the conditions close to the dynamic equilibrium are ordered with a distance between them of about 1 µm and they form a smoothed surface morphology. These are indicative of the surface layer strain uniformity. The islands have a SiGe composition which, in the direction parallel to the sample surface, is more uniform in comparison with the islands grown at lower temperatures. The results show that the use of high temperatures essentially improves the conditions for the heterostructure self-organization.",
keywords = "Dynamic equilibrium, Ge MBE on Si(100), High-temperature growth, Self-organization, Strain relaxation, 001 SURFACE, SILICON, SI(001), SI(111), MICROSCOPY, GE/SI(100) ISLANDS, QUANTUM DOTS, LAYERS, GERMANIUM, GROWTH",
author = "Shklyaev, {A. A.} and Budazhapova, {A. E.}",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/j.mssp.2016.09.033",
language = "English",
volume = "57",
pages = "18--23",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Critical conditions for SiGe island formation during Ge deposition on Si(100) at high temperatures

AU - Shklyaev, A. A.

AU - Budazhapova, A. E.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The strain relaxation during the Ge growth on Si(100) occurs vikia surface diffusion and Si-Ge intermixing at temperatures below 800 °C. The Ge diffusion into the Si substrate is an additional process at higher temperatures. We found that, if its rate is higher than the Ge deposition rate, the island formation is not realized. We determined the critical Ge deposition rate as a function of the temperature in the range of 840–960 °C, at which the dynamic equilibrium between the growth of islands and their decay through the diffusion takes place. The islands grown in the conditions close to the dynamic equilibrium are ordered with a distance between them of about 1 µm and they form a smoothed surface morphology. These are indicative of the surface layer strain uniformity. The islands have a SiGe composition which, in the direction parallel to the sample surface, is more uniform in comparison with the islands grown at lower temperatures. The results show that the use of high temperatures essentially improves the conditions for the heterostructure self-organization.

AB - The strain relaxation during the Ge growth on Si(100) occurs vikia surface diffusion and Si-Ge intermixing at temperatures below 800 °C. The Ge diffusion into the Si substrate is an additional process at higher temperatures. We found that, if its rate is higher than the Ge deposition rate, the island formation is not realized. We determined the critical Ge deposition rate as a function of the temperature in the range of 840–960 °C, at which the dynamic equilibrium between the growth of islands and their decay through the diffusion takes place. The islands grown in the conditions close to the dynamic equilibrium are ordered with a distance between them of about 1 µm and they form a smoothed surface morphology. These are indicative of the surface layer strain uniformity. The islands have a SiGe composition which, in the direction parallel to the sample surface, is more uniform in comparison with the islands grown at lower temperatures. The results show that the use of high temperatures essentially improves the conditions for the heterostructure self-organization.

KW - Dynamic equilibrium

KW - Ge MBE on Si(100)

KW - High-temperature growth

KW - Self-organization

KW - Strain relaxation

KW - 001 SURFACE

KW - SILICON

KW - SI(001)

KW - SI(111)

KW - MICROSCOPY

KW - GE/SI(100) ISLANDS

KW - QUANTUM DOTS

KW - LAYERS

KW - GERMANIUM

KW - GROWTH

UR - http://www.scopus.com/inward/record.url?scp=84991628062&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2016.09.033

DO - 10.1016/j.mssp.2016.09.033

M3 - Article

AN - SCOPUS:84991628062

VL - 57

SP - 18

EP - 23

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -

ID: 10351826