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Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries. / Bulusheva, L. G.; Stolyarova, S. G.; Chuvilin, A. L. и др.

в: Nanotechnology, Том 29, № 13, 134001, 12.02.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bulusheva, LG, Stolyarova, SG, Chuvilin, AL, Shubin, YV, Asanov, IP, Sorokin, AM, Mel'Gunov, MS, Zhang, S, Dong, Y, Chen, X, Song, H & Okotrub, AV 2018, 'Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries', Nanotechnology, Том. 29, № 13, 134001. https://doi.org/10.1088/1361-6528/aaa99f

APA

Bulusheva, L. G., Stolyarova, S. G., Chuvilin, A. L., Shubin, Y. V., Asanov, I. P., Sorokin, A. M., Mel'Gunov, M. S., Zhang, S., Dong, Y., Chen, X., Song, H., & Okotrub, A. V. (2018). Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries. Nanotechnology, 29(13), [134001]. https://doi.org/10.1088/1361-6528/aaa99f

Vancouver

Bulusheva LG, Stolyarova SG, Chuvilin AL, Shubin YV, Asanov IP, Sorokin AM и др. Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries. Nanotechnology. 2018 февр. 12;29(13):134001. doi: 10.1088/1361-6528/aaa99f

Author

Bulusheva, L. G. ; Stolyarova, S. G. ; Chuvilin, A. L. и др. / Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries. в: Nanotechnology. 2018 ; Том 29, № 13.

BibTeX

@article{9bb86a2de6c94b539ef3d4f2bb4b0958,
title = "Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries",
abstract = "Holes with an average size of 2-5 nm have been created in graphene layers by heating of graphite oxide (GO) in concentrated sulfuric acid followed by annealing in an argon flow. The hot mineral acid acts simultaneously as a defunctionalizing and etching agent, removing a part of oxygen-containing groups and lattice carbon atoms from the layers. Annealing of the holey reduced GO at 800 °C-1000 °C causes a decrease of the content of residual oxygen and the interlayer spacing thus producing thin compact stacks from holey graphene layers. Electrochemical tests of the obtained materials in half-cells showed that the removal of oxygen and creation of basal holes lowers the capacity loss in the first cycle and facilitates intercalation-deintercalation of lithium ions. This was attributed to minimization of electrolyte decomposition reactions, easier desolvation of lithium ions near the hole boundaries and appearance of multiple entrances for the naked ions into graphene stacks.",
keywords = "holey graphene, graphite oxide, hot concentrated H2SO4 treatment, Li-ion battery, POROUS GRAPHENE, GRAPHITE OXIDE, SULFURIC-ACID, ENERGY-STORAGE, PERFORMANCE, SPECTROSCOPY, DEFECTS, ADSORPTION, ELECTRODES, CHEMISTRY",
author = "Bulusheva, {L. G.} and Stolyarova, {S. G.} and Chuvilin, {A. L.} and Shubin, {Yu V.} and Asanov, {I. P.} and Sorokin, {A. M.} and Mel'Gunov, {M. S.} and Su Zhang and Yue Dong and Xiaohong Chen and Huaihe Song and Okotrub, {A. V.}",
year = "2018",
month = feb,
day = "12",
doi = "10.1088/1361-6528/aaa99f",
language = "English",
volume = "29",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "13",

}

RIS

TY - JOUR

T1 - Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries

AU - Bulusheva, L. G.

AU - Stolyarova, S. G.

AU - Chuvilin, A. L.

AU - Shubin, Yu V.

AU - Asanov, I. P.

AU - Sorokin, A. M.

AU - Mel'Gunov, M. S.

AU - Zhang, Su

AU - Dong, Yue

AU - Chen, Xiaohong

AU - Song, Huaihe

AU - Okotrub, A. V.

PY - 2018/2/12

Y1 - 2018/2/12

N2 - Holes with an average size of 2-5 nm have been created in graphene layers by heating of graphite oxide (GO) in concentrated sulfuric acid followed by annealing in an argon flow. The hot mineral acid acts simultaneously as a defunctionalizing and etching agent, removing a part of oxygen-containing groups and lattice carbon atoms from the layers. Annealing of the holey reduced GO at 800 °C-1000 °C causes a decrease of the content of residual oxygen and the interlayer spacing thus producing thin compact stacks from holey graphene layers. Electrochemical tests of the obtained materials in half-cells showed that the removal of oxygen and creation of basal holes lowers the capacity loss in the first cycle and facilitates intercalation-deintercalation of lithium ions. This was attributed to minimization of electrolyte decomposition reactions, easier desolvation of lithium ions near the hole boundaries and appearance of multiple entrances for the naked ions into graphene stacks.

AB - Holes with an average size of 2-5 nm have been created in graphene layers by heating of graphite oxide (GO) in concentrated sulfuric acid followed by annealing in an argon flow. The hot mineral acid acts simultaneously as a defunctionalizing and etching agent, removing a part of oxygen-containing groups and lattice carbon atoms from the layers. Annealing of the holey reduced GO at 800 °C-1000 °C causes a decrease of the content of residual oxygen and the interlayer spacing thus producing thin compact stacks from holey graphene layers. Electrochemical tests of the obtained materials in half-cells showed that the removal of oxygen and creation of basal holes lowers the capacity loss in the first cycle and facilitates intercalation-deintercalation of lithium ions. This was attributed to minimization of electrolyte decomposition reactions, easier desolvation of lithium ions near the hole boundaries and appearance of multiple entrances for the naked ions into graphene stacks.

KW - holey graphene

KW - graphite oxide

KW - hot concentrated H2SO4 treatment

KW - Li-ion battery

KW - POROUS GRAPHENE

KW - GRAPHITE OXIDE

KW - SULFURIC-ACID

KW - ENERGY-STORAGE

KW - PERFORMANCE

KW - SPECTROSCOPY

KW - DEFECTS

KW - ADSORPTION

KW - ELECTRODES

KW - CHEMISTRY

UR - http://www.scopus.com/inward/record.url?scp=85042278146&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/aaa99f

DO - 10.1088/1361-6528/aaa99f

M3 - Article

C2 - 29355834

AN - SCOPUS:85042278146

VL - 29

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 13

M1 - 134001

ER -

ID: 10427519