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Coulomb Center in a Transition Metal Dichalcogenide Monolayer. / Mahmoodian, M. M.; Chaplik, A. V.

в: JETP Letters, Том 114, № 9, 7, 11.2021, стр. 545-550.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Mahmoodian, MM & Chaplik, AV 2021, 'Coulomb Center in a Transition Metal Dichalcogenide Monolayer', JETP Letters, Том. 114, № 9, 7, стр. 545-550. https://doi.org/10.1134/S0021364021210104

APA

Mahmoodian, M. M., & Chaplik, A. V. (2021). Coulomb Center in a Transition Metal Dichalcogenide Monolayer. JETP Letters, 114(9), 545-550. [7]. https://doi.org/10.1134/S0021364021210104

Vancouver

Mahmoodian MM, Chaplik AV. Coulomb Center in a Transition Metal Dichalcogenide Monolayer. JETP Letters. 2021 нояб.;114(9):545-550. 7. doi: 10.1134/S0021364021210104

Author

Mahmoodian, M. M. ; Chaplik, A. V. / Coulomb Center in a Transition Metal Dichalcogenide Monolayer. в: JETP Letters. 2021 ; Том 114, № 9. стр. 545-550.

BibTeX

@article{9565d5221a984eaa8ffc63519bbf7179,
title = "Coulomb Center in a Transition Metal Dichalcogenide Monolayer",
abstract = "Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.",
author = "Mahmoodian, {M. M.} and Chaplik, {A. V.}",
note = "Funding Information: This work was supported by the Russian Science Foundation (project no. 17-12-01039). Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Inc.",
year = "2021",
month = nov,
doi = "10.1134/S0021364021210104",
language = "English",
volume = "114",
pages = "545--550",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "9",

}

RIS

TY - JOUR

T1 - Coulomb Center in a Transition Metal Dichalcogenide Monolayer

AU - Mahmoodian, M. M.

AU - Chaplik, A. V.

N1 - Funding Information: This work was supported by the Russian Science Foundation (project no. 17-12-01039). Publisher Copyright: © 2021, Pleiades Publishing, Inc.

PY - 2021/11

Y1 - 2021/11

N2 - Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.

AB - Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.

UR - http://www.scopus.com/inward/record.url?scp=85121556000&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47548020

U2 - 10.1134/S0021364021210104

DO - 10.1134/S0021364021210104

M3 - Article

AN - SCOPUS:85121556000

VL - 114

SP - 545

EP - 550

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 9

M1 - 7

ER -

ID: 35201413