Standard

Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber. / Rodyakina, E. E.; Sitnikov, S. V.; Rogilo, D. I. и др.

в: Russian Microelectronics, Том 47, № 6, 01.11.2018, стр. 365-370.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rodyakina, EE, Sitnikov, SV, Rogilo, DI & Latyshev, AV 2018, 'Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber', Russian Microelectronics, Том. 47, № 6, стр. 365-370. https://doi.org/10.1134/S1063739718060069

APA

Rodyakina, E. E., Sitnikov, S. V., Rogilo, D. I., & Latyshev, A. V. (2018). Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber. Russian Microelectronics, 47(6), 365-370. https://doi.org/10.1134/S1063739718060069

Vancouver

Rodyakina EE, Sitnikov SV, Rogilo DI, Latyshev AV. Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber. Russian Microelectronics. 2018 нояб. 1;47(6):365-370. doi: 10.1134/S1063739718060069

Author

Rodyakina, E. E. ; Sitnikov, S. V. ; Rogilo, D. I. и др. / Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber. в: Russian Microelectronics. 2018 ; Том 47, № 6. стр. 365-370.

BibTeX

@article{dc2cbc470294424094625d2902339391,
title = "Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber",
abstract = "Abstract: The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a temperature of 1100°С and ex situ atomic force microscopy. The nonmonotonic dependence of the average distance between step bunch on the atomic flow to the surface under the growth conditions and the monotonic behavior under the sublimation conditions are established. The increase in the average distance between pairs of inclined steps between the bunches at an external atomic flow comparable with the flow of atoms evaporated from the surface during sublimation is found.",
author = "Rodyakina, {E. E.} and Sitnikov, {S. V.} and Rogilo, {D. I.} and Latyshev, {A. V.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = nov,
day = "1",
doi = "10.1134/S1063739718060069",
language = "English",
volume = "47",
pages = "365--370",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "6",

}

RIS

TY - JOUR

T1 - Controlling the Si(001) Surface Morphology upon Thermal Annealing in a Vacuum Chamber

AU - Rodyakina, E. E.

AU - Sitnikov, S. V.

AU - Rogilo, D. I.

AU - Latyshev, A. V.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/11/1

Y1 - 2018/11/1

N2 - Abstract: The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a temperature of 1100°С and ex situ atomic force microscopy. The nonmonotonic dependence of the average distance between step bunch on the atomic flow to the surface under the growth conditions and the monotonic behavior under the sublimation conditions are established. The increase in the average distance between pairs of inclined steps between the bunches at an external atomic flow comparable with the flow of atoms evaporated from the surface during sublimation is found.

AB - Abstract: The effect of homoepitaxial Si(001) growth on the surface morphology during the annealing of a substrate by passing a direct current is examined by in situ high-vacuum reflection electron microscopy at a temperature of 1100°С and ex situ atomic force microscopy. The nonmonotonic dependence of the average distance between step bunch on the atomic flow to the surface under the growth conditions and the monotonic behavior under the sublimation conditions are established. The increase in the average distance between pairs of inclined steps between the bunches at an external atomic flow comparable with the flow of atoms evaporated from the surface during sublimation is found.

UR - http://www.scopus.com/inward/record.url?scp=85063091157&partnerID=8YFLogxK

U2 - 10.1134/S1063739718060069

DO - 10.1134/S1063739718060069

M3 - Article

AN - SCOPUS:85063091157

VL - 47

SP - 365

EP - 370

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 6

ER -

ID: 18950621