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Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography. / Kozhukhov, A. S.; Shcheglov, D. V.; Latyshev, A. V.

в: Journal of Physics: Conference Series, Том 917, № 3, 032005, 23.11.2017.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kozhukhov, AS, Shcheglov, DV & Latyshev, AV 2017, 'Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography', Journal of Physics: Conference Series, Том. 917, № 3, 032005. https://doi.org/10.1088/1742-6596/917/3/032005

APA

Kozhukhov, A. S., Shcheglov, D. V., & Latyshev, A. V. (2017). Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography. Journal of Physics: Conference Series, 917(3), [032005]. https://doi.org/10.1088/1742-6596/917/3/032005

Vancouver

Kozhukhov AS, Shcheglov DV, Latyshev AV. Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography. Journal of Physics: Conference Series. 2017 нояб. 23;917(3):032005. doi: 10.1088/1742-6596/917/3/032005

Author

Kozhukhov, A. S. ; Shcheglov, D. V. ; Latyshev, A. V. / Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography. в: Journal of Physics: Conference Series. 2017 ; Том 917, № 3.

BibTeX

@article{9ca9c6047ff9451d97afb10e2655f0a2,
title = "Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography",
abstract = "Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 • 10-3 to 4 • 10-2 Ω•cm.",
keywords = "PECULIARITIES",
author = "Kozhukhov, {A. S.} and Shcheglov, {D. V.} and Latyshev, {A. V.}",
year = "2017",
month = nov,
day = "23",
doi = "10.1088/1742-6596/917/3/032005",
language = "English",
volume = "917",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "3",

}

RIS

TY - JOUR

T1 - Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography

AU - Kozhukhov, A. S.

AU - Shcheglov, D. V.

AU - Latyshev, A. V.

PY - 2017/11/23

Y1 - 2017/11/23

N2 - Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 • 10-3 to 4 • 10-2 Ω•cm.

AB - Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 • 10-3 to 4 • 10-2 Ω•cm.

KW - PECULIARITIES

UR - http://www.scopus.com/inward/record.url?scp=85036468975&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/917/3/032005

DO - 10.1088/1742-6596/917/3/032005

M3 - Article

AN - SCOPUS:85036468975

VL - 917

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 3

M1 - 032005

ER -

ID: 9649186