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Comparison of flash-memory elements using materials based on graphene. / Antonova, I. V.; Kotin, I. A.; Orlov, O. M. и др.

в: Technical Physics Letters, Том 43, № 10, 01.10.2017, стр. 889-892.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Antonova, IV, Kotin, IA, Orlov, OM & Devyatova, SF 2017, 'Comparison of flash-memory elements using materials based on graphene', Technical Physics Letters, Том. 43, № 10, стр. 889-892. https://doi.org/10.1134/S1063785017100029

APA

Antonova, I. V., Kotin, I. A., Orlov, O. M., & Devyatova, S. F. (2017). Comparison of flash-memory elements using materials based on graphene. Technical Physics Letters, 43(10), 889-892. https://doi.org/10.1134/S1063785017100029

Vancouver

Antonova IV, Kotin IA, Orlov OM, Devyatova SF. Comparison of flash-memory elements using materials based on graphene. Technical Physics Letters. 2017 окт. 1;43(10):889-892. doi: 10.1134/S1063785017100029

Author

Antonova, I. V. ; Kotin, I. A. ; Orlov, O. M. и др. / Comparison of flash-memory elements using materials based on graphene. в: Technical Physics Letters. 2017 ; Том 43, № 10. стр. 889-892.

BibTeX

@article{6c523bf683fc40779891959dbf244d28,
title = "Comparison of flash-memory elements using materials based on graphene",
abstract = "Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.",
author = "Antonova, {I. V.} and Kotin, {I. A.} and Orlov, {O. M.} and Devyatova, {S. F.}",
year = "2017",
month = oct,
day = "1",
doi = "10.1134/S1063785017100029",
language = "English",
volume = "43",
pages = "889--892",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - Comparison of flash-memory elements using materials based on graphene

AU - Antonova, I. V.

AU - Kotin, I. A.

AU - Orlov, O. M.

AU - Devyatova, S. F.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

AB - Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=85035040472&partnerID=8YFLogxK

U2 - 10.1134/S1063785017100029

DO - 10.1134/S1063785017100029

M3 - Article

AN - SCOPUS:85035040472

VL - 43

SP - 889

EP - 892

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 10

ER -

ID: 9672991