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Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra. / Shklyaev, A. A.

в: Thin Solid Films, Том 768, 139720, 01.03.2023.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Shklyaev AA. Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra. Thin Solid Films. 2023 март 1;768:139720. doi: 10.1016/j.tsf.2023.139720

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BibTeX

@article{f1f88a6d4e5844b78836bae968cf9a08,
title = "Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra",
abstract = "The dewetting phenomenon that occurs during annealing of Ge films after their deposition on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into compact particles begins at temperature as low as 350 °C. The particle shapes become closer to spherical as the annealing temperature is increased to 700 °C. The reflectance spectra of samples coated with dense arrays of compact Ge particles are measured in the wavelength range of 350–1200 nm. They contain two broad minima, at which the reflection decreases by a factor of 5–10, compared to the bare substrate reflection. The minimum in the long-wavelength region of the spectrum is associated with the excitation of magnetic and electric dipole resonances in individual Ge particles. The appearance of a deeper minimum in the short-wavelength region can be attributed to the excitation of quadrupole resonant modes in combination with the effect of small interparticle spacings. The coatings from the thus obtained particles exhibit strong and broadband antireflection properties.",
keywords = "Antireflection coatings, Ge films on Si, Resonance light reflection, Solid-state dewetting",
author = "Shklyaev, {A. A.}",
note = "The work is supported by the Russian Science Foundation (Grant # 19–72–30023 ). The author acknowledges the Shared Equipment Centers CKP “NANOSTRUKTURY ” of the Rzhanov Institute of Semiconductor Physics SB RAS and CKP “VTAN” (ATRC) of the NSU Physics Department for the instrumental and technological support .",
year = "2023",
month = mar,
day = "1",
doi = "10.1016/j.tsf.2023.139720",
language = "English",
volume = "768",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Coatings consisting of Ge particles on nonwettable Si oxide surfaces and their resonance reflection spectra

AU - Shklyaev, A. A.

N1 - The work is supported by the Russian Science Foundation (Grant # 19–72–30023 ). The author acknowledges the Shared Equipment Centers CKP “NANOSTRUKTURY ” of the Rzhanov Institute of Semiconductor Physics SB RAS and CKP “VTAN” (ATRC) of the NSU Physics Department for the instrumental and technological support .

PY - 2023/3/1

Y1 - 2023/3/1

N2 - The dewetting phenomenon that occurs during annealing of Ge films after their deposition on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into compact particles begins at temperature as low as 350 °C. The particle shapes become closer to spherical as the annealing temperature is increased to 700 °C. The reflectance spectra of samples coated with dense arrays of compact Ge particles are measured in the wavelength range of 350–1200 nm. They contain two broad minima, at which the reflection decreases by a factor of 5–10, compared to the bare substrate reflection. The minimum in the long-wavelength region of the spectrum is associated with the excitation of magnetic and electric dipole resonances in individual Ge particles. The appearance of a deeper minimum in the short-wavelength region can be attributed to the excitation of quadrupole resonant modes in combination with the effect of small interparticle spacings. The coatings from the thus obtained particles exhibit strong and broadband antireflection properties.

AB - The dewetting phenomenon that occurs during annealing of Ge films after their deposition on oxidized Si surfaces at room temperature is studied. The agglomeration of Ge films into compact particles begins at temperature as low as 350 °C. The particle shapes become closer to spherical as the annealing temperature is increased to 700 °C. The reflectance spectra of samples coated with dense arrays of compact Ge particles are measured in the wavelength range of 350–1200 nm. They contain two broad minima, at which the reflection decreases by a factor of 5–10, compared to the bare substrate reflection. The minimum in the long-wavelength region of the spectrum is associated with the excitation of magnetic and electric dipole resonances in individual Ge particles. The appearance of a deeper minimum in the short-wavelength region can be attributed to the excitation of quadrupole resonant modes in combination with the effect of small interparticle spacings. The coatings from the thus obtained particles exhibit strong and broadband antireflection properties.

KW - Antireflection coatings

KW - Ge films on Si

KW - Resonance light reflection

KW - Solid-state dewetting

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85147093051&partnerID=40&md5=46a5b18036a0fb732d01497716d3b027

UR - https://www.mendeley.com/catalogue/47a47904-c227-355c-b685-56142f5041ec/

U2 - 10.1016/j.tsf.2023.139720

DO - 10.1016/j.tsf.2023.139720

M3 - Article

VL - 768

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

M1 - 139720

ER -

ID: 49690201