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Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide. / Gritsenko, Vladimir A.; Perevalov, Timofey V.; Voronkovskii, Vitalii A. и др.

в: ACS Applied Materials and Interfaces, Том 10, № 4, 31.01.2018, стр. 3769-3775.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gritsenko, VA, Perevalov, TV, Voronkovskii, VA, Gismatulin, AA, Kruchinin, VN, Aliev, VS, Pustovarov, VA, Prosvirin, IP & Roizin, Y 2018, 'Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide', ACS Applied Materials and Interfaces, Том. 10, № 4, стр. 3769-3775. https://doi.org/10.1021/acsami.7b16753

APA

Gritsenko, V. A., Perevalov, T. V., Voronkovskii, V. A., Gismatulin, A. A., Kruchinin, V. N., Aliev, V. S., Pustovarov, V. A., Prosvirin, I. P., & Roizin, Y. (2018). Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide. ACS Applied Materials and Interfaces, 10(4), 3769-3775. https://doi.org/10.1021/acsami.7b16753

Vancouver

Gritsenko VA, Perevalov TV, Voronkovskii VA, Gismatulin AA, Kruchinin VN, Aliev VS и др. Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide. ACS Applied Materials and Interfaces. 2018 янв. 31;10(4):3769-3775. doi: 10.1021/acsami.7b16753

Author

Gritsenko, Vladimir A. ; Perevalov, Timofey V. ; Voronkovskii, Vitalii A. и др. / Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide. в: ACS Applied Materials and Interfaces. 2018 ; Том 10, № 4. стр. 3769-3775.

BibTeX

@article{06ba38e6b85f4cddb6f70a740c0142b4,
title = "Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide",
abstract = "Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaOx films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaOx by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaOx conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaOx films is phonon-assisted tunneling between the traps.",
keywords = "ab initio simulation, charge transport, optic, oxygen vacancy, photoluminescence, Traps, XPS",
author = "Gritsenko, {Vladimir A.} and Perevalov, {Timofey V.} and Voronkovskii, {Vitalii A.} and Gismatulin, {Andrei A.} and Kruchinin, {Vladimir N.} and Aliev, {Vladimir Sh} and Pustovarov, {Vladimir A.} and Prosvirin, {Igor P.} and Yakov Roizin",
year = "2018",
month = jan,
day = "31",
doi = "10.1021/acsami.7b16753",
language = "English",
volume = "10",
pages = "3769--3775",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Charge Transport and the Nature of Traps in Oxygen Deficient Tantalum Oxide

AU - Gritsenko, Vladimir A.

AU - Perevalov, Timofey V.

AU - Voronkovskii, Vitalii A.

AU - Gismatulin, Andrei A.

AU - Kruchinin, Vladimir N.

AU - Aliev, Vladimir Sh

AU - Pustovarov, Vladimir A.

AU - Prosvirin, Igor P.

AU - Roizin, Yakov

PY - 2018/1/31

Y1 - 2018/1/31

N2 - Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaOx films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaOx by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaOx conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaOx films is phonon-assisted tunneling between the traps.

AB - Optical and transport properties of nonstoichiometric tantalum oxide thin films grown by ion beam deposition were investigated in order to understand the dominant charge transport mechanisms and reveal the nature of traps. The TaOx films composition was analyzed by X-ray photoelectron spectroscopy and by quantum-chemistry simulation. From the optical absorption and photoluminescence measurements and density functional theory simulations, it was concluded that the 2.75 eV blue luminescence excited in a TaOx by 4.45 eV photons, originates from oxygen vacancies. These vacancies are also responsible for TaOx conductivity. The thermal trap energy of 0.85 eV determined from the transport experiments coincides with the half of the Stokes shift of the blue luminescence band. It is argued that the dominant charge transport mechanism in TaOx films is phonon-assisted tunneling between the traps.

KW - ab initio simulation

KW - charge transport

KW - optic

KW - oxygen vacancy

KW - photoluminescence

KW - Traps

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=85041337492&partnerID=8YFLogxK

U2 - 10.1021/acsami.7b16753

DO - 10.1021/acsami.7b16753

M3 - Article

C2 - 29308879

AN - SCOPUS:85041337492

VL - 10

SP - 3769

EP - 3775

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 4

ER -

ID: 10452741