Standard

Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique. / Kasimkin, P. V.; Kurus, A. F.; Shlegel, V. N. и др.

в: Journal of Crystal Growth, Том 531, 125375, 01.02.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kasimkin, PV, Kurus, AF, Shlegel, VN, Vasiliev, YV & Podkopaev, OI 2020, 'Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique', Journal of Crystal Growth, Том. 531, 125375. https://doi.org/10.1016/j.jcrysgro.2019.125375

APA

Kasimkin, P. V., Kurus, A. F., Shlegel, V. N., Vasiliev, Y. V., & Podkopaev, O. I. (2020). Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique. Journal of Crystal Growth, 531, [125375]. https://doi.org/10.1016/j.jcrysgro.2019.125375

Vancouver

Kasimkin PV, Kurus AF, Shlegel VN, Vasiliev YV, Podkopaev OI. Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique. Journal of Crystal Growth. 2020 февр. 1;531:125375. doi: 10.1016/j.jcrysgro.2019.125375

Author

Kasimkin, P. V. ; Kurus, A. F. ; Shlegel, V. N. и др. / Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique. в: Journal of Crystal Growth. 2020 ; Том 531.

BibTeX

@article{162a040a34cf4720b5d031ae5e5f3382,
title = "Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique",
abstract = "The initial stage of germanium crystal growth by the low thermal gradient Czochralski technique of pulling from the melt (LTG CZ) has been studied in a series of experiments, in which the processes have been interrupted after pulling 6 mm in dia., 70–80 mm in length crystal rod and then up to 20 mm long a cone part. The axial gradients estimated from computer modelling were 2–2.5 K/cm. Crystals pulled in 〈1 1 1〉 direction with totally faceted interface were dislocation-free if facet formation was not disturbed. Crystals pulled along 〈1 0 0〉 under identical conditions, had rounded interface due to thermal roughens of (1 0 0) faces. In that case, the dislocation density was low, but not below ~102 cm−2.",
keywords = "A1. Computer simulation, A1. Defects, A2. Czochralski method, A2. Growth from melt, A2. LTG Cz, B2. Semiconducting germanium, LTG Cz, Czochralski method, Growth from melt, Defects Computer simulation, Semiconducting germanium",
author = "Kasimkin, {P. V.} and Kurus, {A. F.} and Shlegel, {V. N.} and Vasiliev, {Y. V.} and Podkopaev, {O. I.}",
note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "2020",
month = feb,
day = "1",
doi = "10.1016/j.jcrysgro.2019.125375",
language = "English",
volume = "531",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique

AU - Kasimkin, P. V.

AU - Kurus, A. F.

AU - Shlegel, V. N.

AU - Vasiliev, Y. V.

AU - Podkopaev, O. I.

N1 - Publisher Copyright: © 2019 Elsevier B.V. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The initial stage of germanium crystal growth by the low thermal gradient Czochralski technique of pulling from the melt (LTG CZ) has been studied in a series of experiments, in which the processes have been interrupted after pulling 6 mm in dia., 70–80 mm in length crystal rod and then up to 20 mm long a cone part. The axial gradients estimated from computer modelling were 2–2.5 K/cm. Crystals pulled in 〈1 1 1〉 direction with totally faceted interface were dislocation-free if facet formation was not disturbed. Crystals pulled along 〈1 0 0〉 under identical conditions, had rounded interface due to thermal roughens of (1 0 0) faces. In that case, the dislocation density was low, but not below ~102 cm−2.

AB - The initial stage of germanium crystal growth by the low thermal gradient Czochralski technique of pulling from the melt (LTG CZ) has been studied in a series of experiments, in which the processes have been interrupted after pulling 6 mm in dia., 70–80 mm in length crystal rod and then up to 20 mm long a cone part. The axial gradients estimated from computer modelling were 2–2.5 K/cm. Crystals pulled in 〈1 1 1〉 direction with totally faceted interface were dislocation-free if facet formation was not disturbed. Crystals pulled along 〈1 0 0〉 under identical conditions, had rounded interface due to thermal roughens of (1 0 0) faces. In that case, the dislocation density was low, but not below ~102 cm−2.

KW - A1. Computer simulation

KW - A1. Defects

KW - A2. Czochralski method

KW - A2. Growth from melt

KW - A2. LTG Cz

KW - B2. Semiconducting germanium

KW - LTG Cz

KW - Czochralski method

KW - Growth from melt

KW - Defects Computer simulation

KW - Semiconducting germanium

UR - http://www.scopus.com/inward/record.url?scp=85076257860&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.125375

DO - 10.1016/j.jcrysgro.2019.125375

M3 - Article

AN - SCOPUS:85076257860

VL - 531

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 125375

ER -

ID: 23057088