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Bipolar conductivity in ferroelectric La:HfZrO films. / Perevalov, Timofey V.; Gismatulin, Andrei A.; Gritsenko, Vladimir A. и др.

в: Applied Physics Letters, Том 118, № 26, 262903, 28.06.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Perevalov, TV, Gismatulin, AA, Gritsenko, VA, Prosvirin, IP, Mehmood, F, Mikolajick, T & Schroeder, U 2021, 'Bipolar conductivity in ferroelectric La:HfZrO films', Applied Physics Letters, Том. 118, № 26, 262903. https://doi.org/10.1063/5.0050748

APA

Perevalov, T. V., Gismatulin, A. A., Gritsenko, V. A., Prosvirin, I. P., Mehmood, F., Mikolajick, T., & Schroeder, U. (2021). Bipolar conductivity in ferroelectric La:HfZrO films. Applied Physics Letters, 118(26), [262903]. https://doi.org/10.1063/5.0050748

Vancouver

Perevalov TV, Gismatulin AA, Gritsenko VA, Prosvirin IP, Mehmood F, Mikolajick T и др. Bipolar conductivity in ferroelectric La:HfZrO films. Applied Physics Letters. 2021 июнь 28;118(26):262903. doi: 10.1063/5.0050748

Author

Perevalov, Timofey V. ; Gismatulin, Andrei A. ; Gritsenko, Vladimir A. и др. / Bipolar conductivity in ferroelectric La:HfZrO films. в: Applied Physics Letters. 2021 ; Том 118, № 26.

BibTeX

@article{a77a77f8e5b54d8c95df52392653f16c,
title = "Bipolar conductivity in ferroelectric La:HfZrO films",
abstract = "Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode.",
author = "Perevalov, {Timofey V.} and Gismatulin, {Andrei A.} and Gritsenko, {Vladimir A.} and Prosvirin, {Igor' P.} and Furqan Mehmood and Thomas Mikolajick and Uwe Schroeder",
note = "Funding Information: This work was supported by the Russian Foundation for Basic Research, Grant No. 20-57-12003 (I–V, C–V measurements), and under the state contract with ISP SBRAS No. 0242-2021-0003 (XPS). F.M. received a partial funding from the European Union Horizon 2020 research and the innovation programme under grant agreement No. 780302. Parts of this work were funded by DFG Grant No. 430054035. Publisher Copyright: {\textcopyright} 2021 Author(s).",
year = "2021",
month = jun,
day = "28",
doi = "10.1063/5.0050748",
language = "English",
volume = "118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "26",

}

RIS

TY - JOUR

T1 - Bipolar conductivity in ferroelectric La:HfZrO films

AU - Perevalov, Timofey V.

AU - Gismatulin, Andrei A.

AU - Gritsenko, Vladimir A.

AU - Prosvirin, Igor' P.

AU - Mehmood, Furqan

AU - Mikolajick, Thomas

AU - Schroeder, Uwe

N1 - Funding Information: This work was supported by the Russian Foundation for Basic Research, Grant No. 20-57-12003 (I–V, C–V measurements), and under the state contract with ISP SBRAS No. 0242-2021-0003 (XPS). F.M. received a partial funding from the European Union Horizon 2020 research and the innovation programme under grant agreement No. 780302. Parts of this work were funded by DFG Grant No. 430054035. Publisher Copyright: © 2021 Author(s).

PY - 2021/6/28

Y1 - 2021/6/28

N2 - Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode.

AB - Lanthanum-doped HfZrO is considered as the ferroelectric material for capacitor structures used in one-transistor-one capacitor nonvolatile memory cells for the development of new generation nonvolatile random-access memory. Here, different capacitor structures are characterized by x-ray photoelectron spectroscopy electrically to determine the electron and hole contribution to the conductivity in these capacitor structures. Experiments related to the minority carrier's injection and charge transport from an n-Si and a p-Si substrate into a lanthanum-doped HfZrO layer show that the conductivity is bipolar. Electrons are injected into La:HfZrO from a negatively biased contact, and accordingly, holes are injected from a positive voltage biased electrode.

UR - http://www.scopus.com/inward/record.url?scp=85109140939&partnerID=8YFLogxK

U2 - 10.1063/5.0050748

DO - 10.1063/5.0050748

M3 - Article

AN - SCOPUS:85109140939

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

M1 - 262903

ER -

ID: 34030377