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Bidirectional surface photovoltage on a topological insulator. / Yoshikawa, T.; Sumida, K.; Ishida, Y. и др.

в: Physical Review B, Том 100, № 16, 165311, 31.10.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Yoshikawa, T, Sumida, K, Ishida, Y, Chen, J, Nurmamat, M, Akiba, K, Miyake, A, Tokunaga, M, Kokh, KA, Tereshchenko, OE, Shin, S & Kimura, A 2019, 'Bidirectional surface photovoltage on a topological insulator', Physical Review B, Том. 100, № 16, 165311. https://doi.org/10.1103/PhysRevB.100.165311

APA

Yoshikawa, T., Sumida, K., Ishida, Y., Chen, J., Nurmamat, M., Akiba, K., Miyake, A., Tokunaga, M., Kokh, K. A., Tereshchenko, O. E., Shin, S., & Kimura, A. (2019). Bidirectional surface photovoltage on a topological insulator. Physical Review B, 100(16), [165311]. https://doi.org/10.1103/PhysRevB.100.165311

Vancouver

Yoshikawa T, Sumida K, Ishida Y, Chen J, Nurmamat M, Akiba K и др. Bidirectional surface photovoltage on a topological insulator. Physical Review B. 2019 окт. 31;100(16):165311. doi: 10.1103/PhysRevB.100.165311

Author

Yoshikawa, T. ; Sumida, K. ; Ishida, Y. и др. / Bidirectional surface photovoltage on a topological insulator. в: Physical Review B. 2019 ; Том 100, № 16.

BibTeX

@article{64180c50951b4650b753e114b7d308cf,
title = "Bidirectional surface photovoltage on a topological insulator",
abstract = "Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.",
keywords = "EXPERIMENTAL REALIZATION, THERMOELECTRIC POWER, PHOTOEMISSION, PHOTOCURRENTS, CONDUCTIVITY, STATES, BI2TE3",
author = "T. Yoshikawa and K. Sumida and Y. Ishida and J. Chen and M. Nurmamat and K. Akiba and A. Miyake and M. Tokunaga and Kokh, {K. A.} and Tereshchenko, {O. E.} and S. Shin and A. Kimura",
year = "2019",
month = oct,
day = "31",
doi = "10.1103/PhysRevB.100.165311",
language = "English",
volume = "100",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

RIS

TY - JOUR

T1 - Bidirectional surface photovoltage on a topological insulator

AU - Yoshikawa, T.

AU - Sumida, K.

AU - Ishida, Y.

AU - Chen, J.

AU - Nurmamat, M.

AU - Akiba, K.

AU - Miyake, A.

AU - Tokunaga, M.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

AU - Shin, S.

AU - Kimura, A.

PY - 2019/10/31

Y1 - 2019/10/31

N2 - Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.

AB - Controlled extraction of spin-polarized currents from the surface of topological insulators (TIs) would be an important step to use TIs as spin-electronic device materials. One way is to utilize the surface photovoltage (SPV) effect, by which the surface current may flow upon irradiation of light. To date, unipolar SPV has been observed on TIs, while the realization of ambipolar SPV is crucial for taking control over the direction of the flow. By using time-resolved photoemission, we demonstrate the ambipolar SPV realized on the TI Bi2Te3. The topological surface states showed downward and upward photovoltaic shifts for the n- and p-type samples, respectively. We also discerned the photogenerated carriers accumulated in the surface states for >4μs. We provide the keys besides the in-gap Fermi level to engineer the SPV on TIs.

KW - EXPERIMENTAL REALIZATION

KW - THERMOELECTRIC POWER

KW - PHOTOEMISSION

KW - PHOTOCURRENTS

KW - CONDUCTIVITY

KW - STATES

KW - BI2TE3

UR - http://www.scopus.com/inward/record.url?scp=85074921598&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.100.165311

DO - 10.1103/PhysRevB.100.165311

M3 - Article

AN - SCOPUS:85074921598

VL - 100

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165311

ER -

ID: 22322366