TY - JOUR

T1 - Bi2Se3Nanolayer Growth on 2D Printed Graphene

AU - Antonova, Irina V.

AU - Kokh, Konstantin A.

AU - Nebogatikova, Nadezhda A.

AU - Suprun, Evgenii A.

AU - Golyashov, Vladimir A.

AU - Tereshchenko, Oleg E.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research (grant nos. 18-2912094 and 21-52-12024) and the state assignment of the Institute of Geology and Mineralogy SB RAS. The photoemission measurements were performed within the framework of the budget project for Synchrotron radiation facility SKIF. The microscopy study was funded by the Ministry of Science and Higher Education of the Russian Federation within the governmental order for Boreskov Institute of Catalysis (project AAAA-A21-121011390053-4). Device fabrication was supported by the Ministry of Science and Higher Education of the Russian Federation (agreement no. 121052600074-4, project FZSR-2022-0009). Publisher Copyright: © 2022 American Chemical Society.

PY - 2022/9/7

Y1 - 2022/9/7

N2 - We studied Bi2Se3 films grown by vapor deposition at 500 °C on layers of printed graphene (the low-cost variant of multigraphene film). Using two-dimensional (2D)-printed graphene to manage the configuration of selective growth of Bi2Se3 films, in combination with capillary effect conditions, makes it possible to form continuous films with a thickness of 8 nm or more and crystallites several times larger than those grown without using the capillary effect. For Bi2Se3 films with a thickness of 20-30 nm, the sheet resistance is 1-3 kω/sq, the carrier density is ∼(2-4) × 1012 cm-2, and the electron mobility at room temperature is 1100-2400 cm2/Vs. The properties of layers grown on a printed graphene film are close to those obtained in the case of growth under the same conditions on CVD graphene. If the printed graphene layer contains residual organic additives, two-layer Bi2Se3/Bi2SeO2/G heterostructures with a conductivity of 0.3-0.9 kω/sq and the similar values of carrier mobility are formed at the same growth regime. Heterostructures of Bi2Se3/G and Bi2Se3/Bi2SeO2 are promising for the formation of conducting layers with high charge carrier mobility and transparent electrodes for the IR range, as well as for efficient conversion of solar energy and other electronic and optical applications

AB - We studied Bi2Se3 films grown by vapor deposition at 500 °C on layers of printed graphene (the low-cost variant of multigraphene film). Using two-dimensional (2D)-printed graphene to manage the configuration of selective growth of Bi2Se3 films, in combination with capillary effect conditions, makes it possible to form continuous films with a thickness of 8 nm or more and crystallites several times larger than those grown without using the capillary effect. For Bi2Se3 films with a thickness of 20-30 nm, the sheet resistance is 1-3 kω/sq, the carrier density is ∼(2-4) × 1012 cm-2, and the electron mobility at room temperature is 1100-2400 cm2/Vs. The properties of layers grown on a printed graphene film are close to those obtained in the case of growth under the same conditions on CVD graphene. If the printed graphene layer contains residual organic additives, two-layer Bi2Se3/Bi2SeO2/G heterostructures with a conductivity of 0.3-0.9 kω/sq and the similar values of carrier mobility are formed at the same growth regime. Heterostructures of Bi2Se3/G and Bi2Se3/Bi2SeO2 are promising for the formation of conducting layers with high charge carrier mobility and transparent electrodes for the IR range, as well as for efficient conversion of solar energy and other electronic and optical applications

UR - http://www.scopus.com/inward/record.url?scp=85136686457&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.2c00431

DO - 10.1021/acs.cgd.2c00431

M3 - Article

AN - SCOPUS:85136686457

VL - 22

SP - 5335

EP - 5344

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 9

ER -