Atomic Structure of Semiconductor Low-Dimensional Heterosystems

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Atomic Structure of Semiconductor Low-Dimensional Heterosystems. / Gutakovskii, A. K.; Latyshev, Alexander V.; Aseev, Alexander L.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 223-253.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование

Harvard

Gutakovskii, AK, Latyshev, AV & Aseev, AL 2017, Atomic Structure of Semiconductor Low-Dimensional Heterosystems. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., стр. 223-253. https://doi.org/10.1016/B978-0-12-810512-2.00009-3

APA

Gutakovskii, A. K., Latyshev, A. V., & Aseev, A. L. (2017). Atomic Structure of Semiconductor Low-Dimensional Heterosystems. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 223-253). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00009-3

Vancouver

Gutakovskii AK, Latyshev AV , Aseev AL. Atomic Structure of Semiconductor Low-Dimensional Heterosystems. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. стр. 223-253 doi: 10.1016/B978-0-12-810512-2.00009-3

Author

Gutakovskii, A. K. ; Latyshev, Alexander V. ; Aseev, Alexander L. / Atomic Structure of Semiconductor Low-Dimensional Heterosystems. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Inc., 2017. стр. 223-253

BibTeX

@inbook{55097bb323f64fb7838d9939ff9734ee,

title = "Atomic Structure of Semiconductor Low-Dimensional Heterosystems",

abstract = "The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.",

keywords = "Heterosystem, High-resolution electron microscopy, Low-dimensional semiconductor systems, Semiconductor, DISLOCATIONS, ORIGIN, HREM, MECHANISM, STRAIN",

author = "Gutakovskii, {A. K.} and Latyshev, {Alexander V.} and Aseev, {Alexander L.}",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-810512-2.00009-3",

language = "English",

isbn = "9780128105122",

pages = "223--253",

editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",

booktitle = "Advances in Semiconductor Nanostructures",

publisher = "Elsevier Science Inc.",

address = "United States",

}

RIS

TY - CHAP

T1 - Atomic Structure of Semiconductor Low-Dimensional Heterosystems

AU - Gutakovskii, A. K.

AU - Latyshev, Alexander V.

AU - Aseev, Alexander L.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

AB - The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

KW - Heterosystem

KW - High-resolution electron microscopy

KW - Low-dimensional semiconductor systems

KW - Semiconductor

KW - DISLOCATIONS

KW - ORIGIN

KW - HREM

KW - MECHANISM

KW - STRAIN

UR - http://www.scopus.com/inward/record.url?scp=85022223504&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00009-3

DO - 10.1016/B978-0-12-810512-2.00009-3

M3 - Chapter

SN - 9780128105122

SP - 223

EP - 253

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

ID: 21753334