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Anomalous negative magnetoresistance of two-dimensional electrons. / Kanter, Jesse; Vitkalov, Sergey; Bykov, A. A.

в: Physical Review B, Том 97, № 20, 205440, 24.05.2018.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Kanter, J, Vitkalov, S & Bykov, AA 2018, 'Anomalous negative magnetoresistance of two-dimensional electrons', Physical Review B, Том. 97, № 20, 205440. https://doi.org/10.1103/PhysRevB.97.205440

APA

Kanter, J., Vitkalov, S., & Bykov, A. A. (2018). Anomalous negative magnetoresistance of two-dimensional electrons. Physical Review B, 97(20), [205440]. https://doi.org/10.1103/PhysRevB.97.205440

Vancouver

Kanter J, Vitkalov S, Bykov AA. Anomalous negative magnetoresistance of two-dimensional electrons. Physical Review B. 2018 май 24;97(20):205440. doi: 10.1103/PhysRevB.97.205440

Author

Kanter, Jesse ; Vitkalov, Sergey ; Bykov, A. A. / Anomalous negative magnetoresistance of two-dimensional electrons. в: Physical Review B. 2018 ; Том 97, № 20.

BibTeX

@article{b109490986f4425ab6bf8528f3d37b99,
title = "Anomalous negative magnetoresistance of two-dimensional electrons",
abstract = "Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B-¥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B-¥:[R(B-¥)-R(0)]=A(T,τq)B-¥η where the power is η≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T,τq)∼[κ(τq)+β(τq)T2]-1 depends significantly on both τq and T where the first term κ∼τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η=3/2.",
keywords = "MAGNETIC-FIELD, LORENTZ MODEL, GAS, MAGNETOTRANSPORT, LOCALIZATION, HETEROSTRUCTURES, SCATTERING, DYNAMICS, RANGE, ARRAY",
author = "Jesse Kanter and Sergey Vitkalov and Bykov, {A. A.}",
year = "2018",
month = may,
day = "24",
doi = "10.1103/PhysRevB.97.205440",
language = "English",
volume = "97",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "20",

}

RIS

TY - JOUR

T1 - Anomalous negative magnetoresistance of two-dimensional electrons

AU - Kanter, Jesse

AU - Vitkalov, Sergey

AU - Bykov, A. A.

PY - 2018/5/24

Y1 - 2018/5/24

N2 - Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B-¥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B-¥:[R(B-¥)-R(0)]=A(T,τq)B-¥η where the power is η≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T,τq)∼[κ(τq)+β(τq)T2]-1 depends significantly on both τq and T where the first term κ∼τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η=3/2.

AB - Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B-¥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B-¥:[R(B-¥)-R(0)]=A(T,τq)B-¥η where the power is η≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T,τq)∼[κ(τq)+β(τq)T2]-1 depends significantly on both τq and T where the first term κ∼τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η=3/2.

KW - MAGNETIC-FIELD

KW - LORENTZ MODEL

KW - GAS

KW - MAGNETOTRANSPORT

KW - LOCALIZATION

KW - HETEROSTRUCTURES

KW - SCATTERING

KW - DYNAMICS

KW - RANGE

KW - ARRAY

UR - http://www.scopus.com/inward/record.url?scp=85047744111&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.97.205440

DO - 10.1103/PhysRevB.97.205440

M3 - Article

AN - SCOPUS:85047744111

VL - 97

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 20

M1 - 205440

ER -

ID: 13668818