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Anomalous negative magnetoresistance of two-dimensional electrons. / Kanter, Jesse; Vitkalov, Sergey; Bykov, A. A.
в: Physical Review B, Том 97, № 20, 205440, 24.05.2018.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Anomalous negative magnetoresistance of two-dimensional electrons
AU - Kanter, Jesse
AU - Vitkalov, Sergey
AU - Bykov, A. A.
PY - 2018/5/24
Y1 - 2018/5/24
N2 - Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B-¥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B-¥:[R(B-¥)-R(0)]=A(T,τq)B-¥η where the power is η≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T,τq)∼[κ(τq)+β(τq)T2]-1 depends significantly on both τq and T where the first term κ∼τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η=3/2.
AB - Effects of temperature T (6-18 K) and variable in situ static disorder on dissipative resistance of two-dimensional electrons are investigated in GaAs quantum wells placed in a perpendicular magnetic-field B-¥. Quantum contributions to the magnetoresistance, leading to quantum positive magnetoresistance (QPMR), are separated by application of an in-plane magnetic field. QPMR decreases considerably with both the temperature and the static disorder and is in good quantitative agreement with theory. The remaining resistance R decreases with the magnetic field exhibiting an anomalous polynomial dependence on B-¥:[R(B-¥)-R(0)]=A(T,τq)B-¥η where the power is η≈1.5±0.1 in a broad range of temperatures and disorder. The disorder is characterized by electron quantum lifetime τq. The scaling factor A(T,τq)∼[κ(τq)+β(τq)T2]-1 depends significantly on both τq and T where the first term κ∼τq-1/2 decreases with τq. The second term is proportional to the square of the temperature and diverges with increasing static disorder. Above a critical disorder the anomalous magnetoresistance is absent, and only a positive magnetoresistance, exhibiting no distinct polynomial behavior with the magnetic field, is observed. The presented model accounts memory effects and yields η=3/2.
KW - MAGNETIC-FIELD
KW - LORENTZ MODEL
KW - GAS
KW - MAGNETOTRANSPORT
KW - LOCALIZATION
KW - HETEROSTRUCTURES
KW - SCATTERING
KW - DYNAMICS
KW - RANGE
KW - ARRAY
UR - http://www.scopus.com/inward/record.url?scp=85047744111&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.97.205440
DO - 10.1103/PhysRevB.97.205440
M3 - Article
AN - SCOPUS:85047744111
VL - 97
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 20
M1 - 205440
ER -
ID: 13668818