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Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. / Zhuravlev, K. S.; Tsarev, A. V.; Gulyaev, D. V. и др.

в: Bulletin of the Lebedev Physics Institute, Том 52, № Suppl. 5, 12.2025, стр. S554-S561.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zhuravlev, KS, Tsarev, AV, Gulyaev, DV, Kolosovskii, EA, Arykov, VS, Yunusov, IV, Ishutkin, SV & Sheinberger, AA 2025, 'Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators', Bulletin of the Lebedev Physics Institute, Том. 52, № Suppl. 5, стр. S554-S561. https://doi.org/10.3103/S1068335625603498

APA

Zhuravlev, K. S., Tsarev, A. V., Gulyaev, D. V., Kolosovskii, E. A., Arykov, V. S., Yunusov, I. V., Ishutkin, S. V., & Sheinberger, A. A. (2025). Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. Bulletin of the Lebedev Physics Institute, 52(Suppl. 5), S554-S561. https://doi.org/10.3103/S1068335625603498

Vancouver

Zhuravlev KS, Tsarev AV, Gulyaev DV, Kolosovskii EA, Arykov VS, Yunusov IV и др. Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. Bulletin of the Lebedev Physics Institute. 2025 дек.;52(Suppl. 5):S554-S561. doi: 10.3103/S1068335625603498

Author

Zhuravlev, K. S. ; Tsarev, A. V. ; Gulyaev, D. V. и др. / Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. в: Bulletin of the Lebedev Physics Institute. 2025 ; Том 52, № Suppl. 5. стр. S554-S561.

BibTeX

@article{e015313047934b9ebabdfcdeff16d86a,
title = "Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators",
abstract = "We report an experimental and theoretical study of the mechanisms of optical losses in a quantum-well waveguide structure for indium phosphide-based electro-optical modulators. It is shown that the presence of an InGaAs cap layer with a high refractive index and high optical loss can lead to anomalously high attenuation of the fundamental TE0 mode. The attenuation is observed near the degeneracy of the dispersion curves of the first two TE polarization modes, which manifests itself at InGaAs cap layer thicknesses of approximately 0.31 μm. The numerical simulation data are in good agreement with the experimentally measured optical losses in such structures.",
keywords = "Stark effect, electro-optical modulator, indium phosphide, multiple quantum well, optical losses, electro-optical modulator, indium phosphide, Stark effect, multiple quantum well, optical losses",
author = "Zhuravlev, {K. S.} and Tsarev, {A. V.} and Gulyaev, {D. V.} and Kolosovskii, {E. A.} and Arykov, {V. S.} and Yunusov, {I. V.} and Ishutkin, {S. V.} and Sheinberger, {A. A.}",
note = "Zhuravlev, K., Tsarev, A., Gulyaev, D. et al. Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. Bull. Lebedev Phys. Inst. 52 (Suppl. 5), S554–S561 (2025). https://doi.org/10.3103/S1068335625603498 The research was performed at the Rzhanov Institute of Semiconductor Problems of the Siberian Branch of the Russian Academy of Sciences and Tomsk State University of Control Systems and Radioelectronics with the support of the Ministry of Science and Higher Education of the Russian Federation under project nos. FWGW-2025-0024 and FEWM-2024-0004, respectively.",
year = "2025",
month = dec,
doi = "10.3103/S1068335625603498",
language = "English",
volume = "52",
pages = "S554--S561",
journal = "Bulletin of the Lebedev Physics Institute",
issn = "1068-3356",
publisher = "Springer",
number = "Suppl. 5",

}

RIS

TY - JOUR

T1 - Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators

AU - Zhuravlev, K. S.

AU - Tsarev, A. V.

AU - Gulyaev, D. V.

AU - Kolosovskii, E. A.

AU - Arykov, V. S.

AU - Yunusov, I. V.

AU - Ishutkin, S. V.

AU - Sheinberger, A. A.

N1 - Zhuravlev, K., Tsarev, A., Gulyaev, D. et al. Anomalous Effects of an InGaAs Cap Layer on Optical Properties of a Quantum-Well Waveguide Structure for Indium Phosphide-Based Electro-Optical Modulators. Bull. Lebedev Phys. Inst. 52 (Suppl. 5), S554–S561 (2025). https://doi.org/10.3103/S1068335625603498 The research was performed at the Rzhanov Institute of Semiconductor Problems of the Siberian Branch of the Russian Academy of Sciences and Tomsk State University of Control Systems and Radioelectronics with the support of the Ministry of Science and Higher Education of the Russian Federation under project nos. FWGW-2025-0024 and FEWM-2024-0004, respectively.

PY - 2025/12

Y1 - 2025/12

N2 - We report an experimental and theoretical study of the mechanisms of optical losses in a quantum-well waveguide structure for indium phosphide-based electro-optical modulators. It is shown that the presence of an InGaAs cap layer with a high refractive index and high optical loss can lead to anomalously high attenuation of the fundamental TE0 mode. The attenuation is observed near the degeneracy of the dispersion curves of the first two TE polarization modes, which manifests itself at InGaAs cap layer thicknesses of approximately 0.31 μm. The numerical simulation data are in good agreement with the experimentally measured optical losses in such structures.

AB - We report an experimental and theoretical study of the mechanisms of optical losses in a quantum-well waveguide structure for indium phosphide-based electro-optical modulators. It is shown that the presence of an InGaAs cap layer with a high refractive index and high optical loss can lead to anomalously high attenuation of the fundamental TE0 mode. The attenuation is observed near the degeneracy of the dispersion curves of the first two TE polarization modes, which manifests itself at InGaAs cap layer thicknesses of approximately 0.31 μm. The numerical simulation data are in good agreement with the experimentally measured optical losses in such structures.

KW - Stark effect

KW - electro-optical modulator

KW - indium phosphide

KW - multiple quantum well

KW - optical losses

KW - electro-optical modulator

KW - indium phosphide

KW - Stark effect

KW - multiple quantum well

KW - optical losses

UR - https://www.scopus.com/pages/publications/105024199533

UR - https://www.mendeley.com/catalogue/b09289de-ef3c-35d8-bf6d-f951de05d720/

U2 - 10.3103/S1068335625603498

DO - 10.3103/S1068335625603498

M3 - Article

VL - 52

SP - S554-S561

JO - Bulletin of the Lebedev Physics Institute

JF - Bulletin of the Lebedev Physics Institute

SN - 1068-3356

IS - Suppl. 5

ER -

ID: 72573328