Standard

Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface. / Sitnikov, S. V.; Latyshev, A. V.; Kosolobov, S. S.

в: Journal of Crystal Growth, Том 457, 01.01.2017, стр. 196-201.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Sitnikov, SV, Latyshev, AV & Kosolobov, SS 2017, 'Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface', Journal of Crystal Growth, Том. 457, стр. 196-201. https://doi.org/10.1016/j.jcrysgro.2016.05.048

APA

Sitnikov, S. V., Latyshev, A. V., & Kosolobov, S. S. (2017). Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface. Journal of Crystal Growth, 457, 196-201. https://doi.org/10.1016/j.jcrysgro.2016.05.048

Vancouver

Sitnikov SV, Latyshev AV, Kosolobov SS. Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface. Journal of Crystal Growth. 2017 янв. 1;457:196-201. doi: 10.1016/j.jcrysgro.2016.05.048

Author

Sitnikov, S. V. ; Latyshev, A. V. ; Kosolobov, S. S. / Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface. в: Journal of Crystal Growth. 2017 ; Том 457. стр. 196-201.

BibTeX

@article{c00e4d58e5e246e691e150dc6e4f4e46,
title = "Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface",
abstract = "We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.",
keywords = "A1. Diffusion, A1. Mass transfer, A1. Surface processes, B2. Semiconducting silicon, VICINAL SURFACES, SILICON, SUBLIMATION, REFLECTION ELECTRON-MICROSCOPY, Mass transfer, TEMPERATURE, PHASE-TRANSITION, GROWTH, Semiconducting silicon, SCANNING-TUNNELING-MICROSCOPY, Surface processes, Diffusion, IN-SITU, TRANSFORMATIONS",
author = "Sitnikov, {S. V.} and Latyshev, {A. V.} and Kosolobov, {S. S.}",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/j.jcrysgro.2016.05.048",
language = "English",
volume = "457",
pages = "196--201",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Advacancy-mediated atomic steps kinetics and two-dimensional negative island nucleation on ultra-flat Si(111) surface

AU - Sitnikov, S. V.

AU - Latyshev, A. V.

AU - Kosolobov, S. S.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.

AB - We have investigated Si(111) surface morphology transformations during high-temperature sublimation and oxygen treatments by means of in situ ultrahigh vacuum reflection electron microscopy. By analyzing atomic steps kinetics and two-dimensional negative (vacancy) islands nucleation on ultra-flat Si(111) surface with extremely wide (up to 120 μm in size) terraces we have estimated the activation energy associated with the surface-bulk vacancy exchange processes. We show that atomic steps motion and negative islands nucleation kinetics at temperatures above 1180 °C can be described by the step-flow model of Burton, Cabrera and Frank taking into account advacancies formation. By comparing experimental results with predictions of model we conclude that the surface mass transport at temperatures above 1180 °C is governed by surface vacancies nucleation and interaction with atomic steps rather than via adatoms surface diffusion.

KW - A1. Diffusion

KW - A1. Mass transfer

KW - A1. Surface processes

KW - B2. Semiconducting silicon

KW - VICINAL SURFACES

KW - SILICON

KW - SUBLIMATION

KW - REFLECTION ELECTRON-MICROSCOPY

KW - Mass transfer

KW - TEMPERATURE

KW - PHASE-TRANSITION

KW - GROWTH

KW - Semiconducting silicon

KW - SCANNING-TUNNELING-MICROSCOPY

KW - Surface processes

KW - Diffusion

KW - IN-SITU

KW - TRANSFORMATIONS

UR - http://www.scopus.com/inward/record.url?scp=84973131445&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2016.05.048

DO - 10.1016/j.jcrysgro.2016.05.048

M3 - Article

AN - SCOPUS:84973131445

VL - 457

SP - 196

EP - 201

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -

ID: 10352102